Patents Assigned to CSI Cells Co. Ltd.
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Patent number: 11094838Abstract: The present disclosure relates to a method for preparing nano-textured surface on single side of a silicon wafer, including the following steps: (1) superimposing two silicon wafers to obtain a first silicon wafer superimposition structure; the side on which the silicon wafers is superimposed is recorded as an attached surface, and the side exposed outside is recorded as an exposed surface; and (2) performing nano-textured surface etching on the first silicon wafer superimposition structure; and providing each silicon wafer with nano-textured surface on the exposed surface and a nano-textured surface etched strip on the edge of the attached surface. In the present disclosure, while the nano-textured surface etching is performed, the edge of the attached surface is etched with nano-textured surface by selecting a specific etching rate, which reduces the pulling force for detaching the wafers and reduces the fragmentation rate during the detaching process.Type: GrantFiled: May 1, 2019Date of Patent: August 17, 2021Assignees: CSI CELLS CO., LTD., CSI SOLAR POWER GROUP CO., LTD.Inventors: Shuai Zou, Xiaoya Ye, Fang Cao, Xusheng Wang, Guoqiang Xing
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Patent number: 10411145Abstract: A method for producing a textured structure of a crystalline silicon solar cell is provided, including the following steps: (1) forming a porous layer structure on a surface of a silicon wafer; (2) then cleaning with a first alkaline chemical solution; (3) removing residual metal particles with a cleaning solution; (4) and then etching the surface with a first chemical etching solution to obtain the textured structure of the crystalline silicon solar cell. The method greatly prolongs the lifetime of the mixed solution of hydrofluoric acid and nitric acid and ensures the stability and uniformity of the textured structure.Type: GrantFiled: June 27, 2017Date of Patent: September 10, 2019Assignee: CSI CELLS CO., LTD.Inventors: Shuai Zou, Xusheng Wang, Guoqiang Xing
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Patent number: 9966484Abstract: A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming PN junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost.Type: GrantFiled: December 31, 2015Date of Patent: May 8, 2018Assignee: CSI CELLS CO., LTDInventors: Shuai Zou, Weixu Long, Xusheng Wang, Guoqiang Xing
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Publication number: 20170358695Abstract: A textured structure of a crystalline silicon solar cell that is mainly constructed by a plurality of micro-structures similar to inverted pyramids; the lower part of the micro-structure similar to the inverted pyramid is an inverted pyramidal structure, and the upper part thereof is an inverted circular truncated conical structure; and the top of the micro-structure similar to the inverted pyramid is selected from one or more of a circle, an oval, or a closed figure enclosed by multiple curves. Experiments prove that the conversion efficiency of a cell piece may be improved by 0.25-0.4%, thereby obtaining unexpected effects.Type: ApplicationFiled: December 13, 2015Publication date: December 14, 2017Applicant: CSI Cells Co., LtdInventors: Shuai ZOU, Xusheng WANG, Guoqiang XING
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Publication number: 20170294545Abstract: A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming PN junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost.Type: ApplicationFiled: December 31, 2015Publication date: October 12, 2017Applicant: CSI CELLS CO., LTDInventors: Shuai ZOU, Weixu LONG, Xusheng WANG, Guoqiang XING
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Patent number: 9281435Abstract: Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.Type: GrantFiled: July 28, 2011Date of Patent: March 8, 2016Assignee: CSI CELLS CO., LTDInventors: Lingjun Zhang, Jian Wu, Feng Zhang, Xusheng Wang
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Patent number: 9209342Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.Type: GrantFiled: October 17, 2014Date of Patent: December 8, 2015Assignee: CSI CELLS CO., LTDInventors: Lingjun Zhang, Feng Zhang, Jian Wu, Xusheng Wang
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Patent number: 9153713Abstract: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.Type: GrantFiled: July 28, 2011Date of Patent: October 6, 2015Assignee: CSI CELLS CO., LTDInventors: Lingjun Zhang, Jian Shen, Xusheng Wang, Jian Wu, Feng Zhang
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Patent number: 8916410Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.Type: GrantFiled: July 28, 2011Date of Patent: December 23, 2014Assignee: CSI Cells Co., LtdInventors: Lingjun Zhang, Feng Zhang, Jian Wu, Xusheng Wang
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Publication number: 20120298192Abstract: Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.Type: ApplicationFiled: July 28, 2011Publication date: November 29, 2012Applicant: CSI Cells Co., Ltd.Inventors: Lingjun ZHANG, Jian WU, Feng ZHANG, Xusheng WANG
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Publication number: 20120301997Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.Type: ApplicationFiled: July 28, 2011Publication date: November 29, 2012Applicant: CSI Cells Co., Ltd.Inventors: Lingjun ZHANG, Feng Zhang, Jian Wu, Xusheng Wang
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Publication number: 20120247529Abstract: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.Type: ApplicationFiled: July 28, 2011Publication date: October 4, 2012Applicant: CSI Cells Co., LtdInventors: Lingjun Zhang, Jian Shen, Xusheng Wang, Jian Wu, Feng Zhang
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Patent number: 7663383Abstract: A method for detection and analysis of impurity content of refined metallurgical silicon includes: (1) select the measuring points on the crystal rods or crystal ingots along the crystallization direction, measuring the resistivity at each measuring point and acquire the measured value of resistivity according to the distribution of crystallized fraction; (2) get the estimated value of the content of boron and phosphorus at each measuring point and calculate the estimated net redundant carrier concentration and the measured value of resistivity; (3) compare the estimated value of net redundant carrier concentration with that of the measured value, and adjust the estimated value of impurity content in the silicon material to get the new estimated net redundant carrier concentration, and use regression analysis to determine the impurity content distribution of boron and phosphorus; (4) get the average impurity content of boron and phosphorus in the silicon material according to the distribution status of impuriType: GrantFiled: October 3, 2008Date of Patent: February 16, 2010Assignee: CSI Cells Co. Ltd.Inventors: Genmao Chen, Jiang Peng
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Patent number: 7611977Abstract: This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050° C. to form a 10 to 30 nm thick oxide layer on the surface of said silicon wafer, diffusing from a phosphorus source at 850-900° C., until a block resistance of a material surface is controlled at 40 to 50 ohms, and the junction depth is at 0.2 to 1.0 microns, and annealing in a nitrogen atmosphere at 700-750° C. for thirty to sixty minutes to complete the phosphorus diffusion of said mono-crystalline silicon wafer. This invention allows the use of 4 N˜5 N mono-crystalline silicon as the material for manufacturing solar cells, so, the low purity material such as metallurgical silicon can be used, which greatly reduces the cost of materials.Type: GrantFiled: October 3, 2008Date of Patent: November 3, 2009Assignee: CSI Cells Co. Ltd.Inventors: Lingjun Zhang, Yunxiang Zuo
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Publication number: 20090098715Abstract: A process for manufacturing silicon wafers for solar cell is disclosed wherein one first breaks the refined metallurgical silicon, then remove visible impurities, then performs chemical cleaning and then places the silicon into a crystal growing furnace. Gallium or gallium phosphide is added to the silicon, where the concentration of gallium atoms should be in the range from 5 ppma to 14 ppma. Crystal growth is initiated, followed by subdivision and inspection after the crystal rods or crystal bars have grown, yielding the desired silicon wafers. With this solution, the refined metallurgical silicon can be used for manufacturing of solar cells, so as to reduce the cost of materials, and it is conducive to the universal application of silicon solar cells.Type: ApplicationFiled: October 3, 2008Publication date: April 16, 2009Applicant: CSI Cells Co., Ltd.Inventors: Genmao Chen, Jiang Peng
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Publication number: 20090091339Abstract: This invention discloses a method for detection and analysis of impurity content of refined metallurgical silicon, comprising: (1) select the measuring points on the crystal rods or crystal ingots along the crystallization direction, measuring the resistivity at each measuring point and acquire the measured value of resistivity according to the distribution of crystallized fraction; (2) get the estimated value of the content of boron and phosphorus at each measuring point and calculate the estimated net redundant carrier concentration and the measured value of resistivity; (3) compare the estimated value of net redundant carrier concentration with that of the measured value, and adjust the estimated value of impurity content in the silicon material to get the new estimated net redundant carrier concentration, and use regression analysis to determine the impurity content distribution of boron and phosphorus; (4) get the average impurity content of boron and phosphorus in the silicon material according to the dType: ApplicationFiled: October 3, 2008Publication date: April 9, 2009Applicant: CSI Cells Co., Ltd.Inventors: Genmao Chen, Jiang Peng
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Patent number: D658577Type: GrantFiled: June 7, 2011Date of Patent: May 1, 2012Assignee: CSI Cells Co., LtdInventors: Lingjun Zhang, Weixu Long, Feng Zhang, Xusheng Wang
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Patent number: D894115Type: GrantFiled: May 17, 2018Date of Patent: August 25, 2020Assignees: CSI CELLS CO., LTD., CANADIAN SOLAR MANUFACTURING (CHANGSHU) INC., CSI SOLAR POWER GROUP CO., LTD.Inventors: Zhengyue Xia, Jie Xu, Xinchun Yan, Minjie Zhu, Guoqiang Xing
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Patent number: D902845Type: GrantFiled: July 29, 2019Date of Patent: November 24, 2020Assignees: CSI CELLS CO., LTD., CANADIAN SOLAR MANUFACTURING (CHANGSHU) INC., CSI SOLAR POWER GROUP CO., LTD.Inventors: Zhengyue Xia, Jie Xu, Xinchun Yan, Minjie Zhu, Guoqiang Xing
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Patent number: D1016734Type: GrantFiled: July 22, 2021Date of Patent: March 5, 2024Assignees: CSI Cells Co. Ltd, Canadian Solar Manufacturing (Changshu) Inc.Inventors: Xuanxuan Liu, Xiujuan Pan, Jingbing Dong, Fuyang Huang, Tao Xu