Patents Assigned to CSI Cells Co. Ltd.
  • Patent number: 11094838
    Abstract: The present disclosure relates to a method for preparing nano-textured surface on single side of a silicon wafer, including the following steps: (1) superimposing two silicon wafers to obtain a first silicon wafer superimposition structure; the side on which the silicon wafers is superimposed is recorded as an attached surface, and the side exposed outside is recorded as an exposed surface; and (2) performing nano-textured surface etching on the first silicon wafer superimposition structure; and providing each silicon wafer with nano-textured surface on the exposed surface and a nano-textured surface etched strip on the edge of the attached surface. In the present disclosure, while the nano-textured surface etching is performed, the edge of the attached surface is etched with nano-textured surface by selecting a specific etching rate, which reduces the pulling force for detaching the wafers and reduces the fragmentation rate during the detaching process.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: August 17, 2021
    Assignees: CSI CELLS CO., LTD., CSI SOLAR POWER GROUP CO., LTD.
    Inventors: Shuai Zou, Xiaoya Ye, Fang Cao, Xusheng Wang, Guoqiang Xing
  • Patent number: 10411145
    Abstract: A method for producing a textured structure of a crystalline silicon solar cell is provided, including the following steps: (1) forming a porous layer structure on a surface of a silicon wafer; (2) then cleaning with a first alkaline chemical solution; (3) removing residual metal particles with a cleaning solution; (4) and then etching the surface with a first chemical etching solution to obtain the textured structure of the crystalline silicon solar cell. The method greatly prolongs the lifetime of the mixed solution of hydrofluoric acid and nitric acid and ensures the stability and uniformity of the textured structure.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: September 10, 2019
    Assignee: CSI CELLS CO., LTD.
    Inventors: Shuai Zou, Xusheng Wang, Guoqiang Xing
  • Patent number: 9966484
    Abstract: A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming PN junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: May 8, 2018
    Assignee: CSI CELLS CO., LTD
    Inventors: Shuai Zou, Weixu Long, Xusheng Wang, Guoqiang Xing
  • Publication number: 20170358695
    Abstract: A textured structure of a crystalline silicon solar cell that is mainly constructed by a plurality of micro-structures similar to inverted pyramids; the lower part of the micro-structure similar to the inverted pyramid is an inverted pyramidal structure, and the upper part thereof is an inverted circular truncated conical structure; and the top of the micro-structure similar to the inverted pyramid is selected from one or more of a circle, an oval, or a closed figure enclosed by multiple curves. Experiments prove that the conversion efficiency of a cell piece may be improved by 0.25-0.4%, thereby obtaining unexpected effects.
    Type: Application
    Filed: December 13, 2015
    Publication date: December 14, 2017
    Applicant: CSI Cells Co., Ltd
    Inventors: Shuai ZOU, Xusheng WANG, Guoqiang XING
  • Publication number: 20170294545
    Abstract: A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming PN junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost.
    Type: Application
    Filed: December 31, 2015
    Publication date: October 12, 2017
    Applicant: CSI CELLS CO., LTD
    Inventors: Shuai ZOU, Weixu LONG, Xusheng WANG, Guoqiang XING
  • Patent number: 9281435
    Abstract: Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: March 8, 2016
    Assignee: CSI CELLS CO., LTD
    Inventors: Lingjun Zhang, Jian Wu, Feng Zhang, Xusheng Wang
  • Patent number: 9209342
    Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: December 8, 2015
    Assignee: CSI CELLS CO., LTD
    Inventors: Lingjun Zhang, Feng Zhang, Jian Wu, Xusheng Wang
  • Patent number: 9153713
    Abstract: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: October 6, 2015
    Assignee: CSI CELLS CO., LTD
    Inventors: Lingjun Zhang, Jian Shen, Xusheng Wang, Jian Wu, Feng Zhang
  • Patent number: 8916410
    Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: December 23, 2014
    Assignee: CSI Cells Co., Ltd
    Inventors: Lingjun Zhang, Feng Zhang, Jian Wu, Xusheng Wang
  • Publication number: 20120298192
    Abstract: Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.
    Type: Application
    Filed: July 28, 2011
    Publication date: November 29, 2012
    Applicant: CSI Cells Co., Ltd.
    Inventors: Lingjun ZHANG, Jian WU, Feng ZHANG, Xusheng WANG
  • Publication number: 20120301997
    Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.
    Type: Application
    Filed: July 28, 2011
    Publication date: November 29, 2012
    Applicant: CSI Cells Co., Ltd.
    Inventors: Lingjun ZHANG, Feng Zhang, Jian Wu, Xusheng Wang
  • Publication number: 20120247529
    Abstract: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.
    Type: Application
    Filed: July 28, 2011
    Publication date: October 4, 2012
    Applicant: CSI Cells Co., Ltd
    Inventors: Lingjun Zhang, Jian Shen, Xusheng Wang, Jian Wu, Feng Zhang
  • Patent number: 7663383
    Abstract: A method for detection and analysis of impurity content of refined metallurgical silicon includes: (1) select the measuring points on the crystal rods or crystal ingots along the crystallization direction, measuring the resistivity at each measuring point and acquire the measured value of resistivity according to the distribution of crystallized fraction; (2) get the estimated value of the content of boron and phosphorus at each measuring point and calculate the estimated net redundant carrier concentration and the measured value of resistivity; (3) compare the estimated value of net redundant carrier concentration with that of the measured value, and adjust the estimated value of impurity content in the silicon material to get the new estimated net redundant carrier concentration, and use regression analysis to determine the impurity content distribution of boron and phosphorus; (4) get the average impurity content of boron and phosphorus in the silicon material according to the distribution status of impuri
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: February 16, 2010
    Assignee: CSI Cells Co. Ltd.
    Inventors: Genmao Chen, Jiang Peng
  • Patent number: 7611977
    Abstract: This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050° C. to form a 10 to 30 nm thick oxide layer on the surface of said silicon wafer, diffusing from a phosphorus source at 850-900° C., until a block resistance of a material surface is controlled at 40 to 50 ohms, and the junction depth is at 0.2 to 1.0 microns, and annealing in a nitrogen atmosphere at 700-750° C. for thirty to sixty minutes to complete the phosphorus diffusion of said mono-crystalline silicon wafer. This invention allows the use of 4 N˜5 N mono-crystalline silicon as the material for manufacturing solar cells, so, the low purity material such as metallurgical silicon can be used, which greatly reduces the cost of materials.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: November 3, 2009
    Assignee: CSI Cells Co. Ltd.
    Inventors: Lingjun Zhang, Yunxiang Zuo
  • Publication number: 20090098715
    Abstract: A process for manufacturing silicon wafers for solar cell is disclosed wherein one first breaks the refined metallurgical silicon, then remove visible impurities, then performs chemical cleaning and then places the silicon into a crystal growing furnace. Gallium or gallium phosphide is added to the silicon, where the concentration of gallium atoms should be in the range from 5 ppma to 14 ppma. Crystal growth is initiated, followed by subdivision and inspection after the crystal rods or crystal bars have grown, yielding the desired silicon wafers. With this solution, the refined metallurgical silicon can be used for manufacturing of solar cells, so as to reduce the cost of materials, and it is conducive to the universal application of silicon solar cells.
    Type: Application
    Filed: October 3, 2008
    Publication date: April 16, 2009
    Applicant: CSI Cells Co., Ltd.
    Inventors: Genmao Chen, Jiang Peng
  • Publication number: 20090091339
    Abstract: This invention discloses a method for detection and analysis of impurity content of refined metallurgical silicon, comprising: (1) select the measuring points on the crystal rods or crystal ingots along the crystallization direction, measuring the resistivity at each measuring point and acquire the measured value of resistivity according to the distribution of crystallized fraction; (2) get the estimated value of the content of boron and phosphorus at each measuring point and calculate the estimated net redundant carrier concentration and the measured value of resistivity; (3) compare the estimated value of net redundant carrier concentration with that of the measured value, and adjust the estimated value of impurity content in the silicon material to get the new estimated net redundant carrier concentration, and use regression analysis to determine the impurity content distribution of boron and phosphorus; (4) get the average impurity content of boron and phosphorus in the silicon material according to the d
    Type: Application
    Filed: October 3, 2008
    Publication date: April 9, 2009
    Applicant: CSI Cells Co., Ltd.
    Inventors: Genmao Chen, Jiang Peng
  • Patent number: D658577
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: May 1, 2012
    Assignee: CSI Cells Co., Ltd
    Inventors: Lingjun Zhang, Weixu Long, Feng Zhang, Xusheng Wang
  • Patent number: D894115
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: August 25, 2020
    Assignees: CSI CELLS CO., LTD., CANADIAN SOLAR MANUFACTURING (CHANGSHU) INC., CSI SOLAR POWER GROUP CO., LTD.
    Inventors: Zhengyue Xia, Jie Xu, Xinchun Yan, Minjie Zhu, Guoqiang Xing
  • Patent number: D902845
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: November 24, 2020
    Assignees: CSI CELLS CO., LTD., CANADIAN SOLAR MANUFACTURING (CHANGSHU) INC., CSI SOLAR POWER GROUP CO., LTD.
    Inventors: Zhengyue Xia, Jie Xu, Xinchun Yan, Minjie Zhu, Guoqiang Xing
  • Patent number: D1016734
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: March 5, 2024
    Assignees: CSI Cells Co. Ltd, Canadian Solar Manufacturing (Changshu) Inc.
    Inventors: Xuanxuan Liu, Xiujuan Pan, Jingbing Dong, Fuyang Huang, Tao Xu