Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.

Abstract: The present invention discloses a burner for a scrubber comprising a housing including a combustion zone to which waste gas is entered, the combustion zone having an internal central region and an opened lower portion, the housing including a mixing zone for mixing an oxidizer and fuel entered thereinto, the mixing zone being disposed along an outer side of the combustion zone and formed into a ring shape; and a metal cartridge disposed between the combustion zone and the mixing zone and provided with apertures for supplying the oxidizer and fuel mixed in the mixing zone to the combustion zone.

Abstract: The present invention discloses a burner for a scrubber comprising a housing including a combustion zone to which waste gas is entered, the combustion zone having an internal central region and an opened lower portion, the housing including a mixing zone for mixing an oxidizer and fuel entered thereinto, the mixing zone being disposed along an outer side of the combustion zone and formed into a ring shape; and a metal cartridge disposed between the combustion zone and the mixing zone and provided with apertures for supplying the oxidizer and fuel mixed in the mixing zone to the combustion zone.