Abstract: A method for manufacturing a photovoltaic module with edge protection comprising: a) providing a transparent module substrate comprising a thin film solar module on a first surface of the transparent module substrate, b) applying at least two side busbars to the thin film solar module, c) placing a first encapsulation foil onto the thin film solar module, d) placing a transparent back substrate onto the first encapsulation foil, e) placing a second encapsulation foil onto a second surface of the transparent module substrate, f) placing a transparent front substrate onto the second encapsulation foil, g) laminating a substrate stack, h) placing a pressure mould over the edge of the substrate stack, i) injecting an edge protection mass into the pressure mould, and j) moving the pressure mould along the edges of the substrate stack to form a circumferential edge protection, as well as a photovoltaic module comprising an edge protection.

Abstract: The invention refers to a method for activating an absorber layer of a semi-finished thin-film solar cell. The absorber layer comprises CdSexTe1-x, CdSe, CdS or CdTe. The method comprises the steps of providing a semi-finished thin-film solar cell with an absorber layer comprising a CdSexTe1-x, layer or comprising at least two layers selected from CdS, CdTe, ZnTe, CdSe, forming a polyvinylchloride film on a surface of the absorber layer, and performing a heat treatment of the semi-finished thin-film solar cell with the polyvinylchloride film on it, wherein the temperature is in the range of 300° C. to 500° C.

Abstract: The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSewTe1-w layer having a first amount w1 of selenium in it, forming a second CdSewTe1-w layer having a second amount w2 of selenium in it and forming a third CdSewTe1-w layer having a third amount w3 of selenium in it. The second amount w2 lies in the range between 0.25 and 0.4, whereas each of the amounts w1 and w3 lies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSewTe1-w layers is equal to or higher than 1.45 eV and the energy gap in the second CdSewTe1-w layer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSewTe1-w layers.

Abstract: The present invention relates to a method and an apparatus for determining the position of a substrate within a closed chamber, wherein the substrate is moved within the chamber by a transport system comprising at least one rotating shaft. A load-converting element is provided adjacent to at least one of the rotating shafts, wherein the load-converting element detects a load acting on the at least one rotating shaft and converts it into an electrical parameter. While no substrate is present on the at least one rotating shaft, a first output signal corresponding to a first value of the electrical parameter is measured. The output signal is then monitored and a presence of the substrate on the at least one rotating shaft is detected when the output signal differs from the first output signal by at least a predetermined amount.

Abstract: Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.

Abstract: The subject of this invention is a method for testing the data and control interface of individual machines intended for interconnection in an inline system for solar cell production. Furthermore, an Interface-Tester suitable for executing the testing method is disclosed. The method for testing comprises the steps of feeding a dummy workpiece to the tested machine and connecting the interface tester to the standard interface of the machine. Consecutively the interface tester sends controlling signals to the machine and receives the signals from the tested machine. The received signals are compared to reference signals and evaluated. The interface tester comprises a standard interface for coupling the machines in an inline system for solar cell production. Furthermore, the interface tester is equipped with at least one CPU, a volatile and/or non-volatile memory, communication modules, couplers and connectors and at least one human-machine interface.

Abstract: The subject of this invention is a method for testing the data and control interface of individual machines intended for interconnection in an inline system for solar cell production. Furthermore, an Interface-Tester suitable for executing the testing method is disclosed. The method for testing comprises the steps of feeding a dummy workpiece to the tested machine and connecting the interface tester to the standard interface of the machine. Consecutively the interface tester sends controlling signals to the machine and receives the signals from the tested machine. The received signals are compared to reference signals and evaluated. The interface tester comprises a standard interface for coupling the machines in an inline system for solar cell production. Furthermore, the interface tester is equipped with at least one CPU, a volatile and/or non-volatile memory, communication modules, couplers and connectors and at least one human-machine interface.

Abstract: The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Abstract: The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Abstract: The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSewTe1-w layer having a first amount w1 of selenium in it, forming a second CdSewTe1-w layer having a second amount w2 of selenium in it and forming a third CdSewTe1-w layer having a third amount w3 of selenium in it. The second amount w2 lies in the range between 0.25 and 0.4, whereas each of the amounts w1 and w3 lies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSewTe1-w layers is equal to or higher than 1.45 eV and the energy gap in the second CdSewTe1-w layer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSewTe1-w layers.

Abstract: A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Abstract: The present invention describes a method for producing CdTe thin-film solar cells, in which special parameters of different processing steps and a special sequence of processing steps result in improved characteristics of the produced CdTe solar cells.

Abstract: The present invention describes a method for producing CdTe thin-film solar cells, in which special parameters of different processing steps and a special sequence of processing steps result in improved characteristics of the produced CdTe solar cells.

Abstract: The present invention relates to a method and an apparatus for determining the position of a substrate within a closed chamber, wherein the substrate is moved within the chamber by a transport system comprising at least one rotating shaft. A load-converting element is provided adjacent to at least one of the rotating shafts, wherein the load-converting element detects a load acting on the at least one rotating shaft and converts it into an electrical parameter. While no substrate is present on the at least one rotating shaft, a first output signal corresponding to a first value of the electrical parameter is measured. The output signal is then monitored and a presence of the substrate on the at least one rotating shaft is detected when the output signal differs from the first output signal by at least a predetermined amount.

Abstract: Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.

Abstract: A crucible for accommodating and heating a material to be vaporized or sublimed and a system for it. The crucible comprises: at least one concave recess, which is applicable to accommodating a material to be vaporized or sublimed, and the concave recess is formed on a first surface of the crucible; and a bottom recess and/or a side recess, the bottom recess is formed on a second surface of the crucible, the second surface is opposite to the first surface, and the side recess is formed in a side wall of the crucible, the side wall extends from the first surface to the second surface, wherein the side recess has an opening near the second surface of the crucible. The system comprises the crucible and a heater arrangement for heating the crucible, wherein the heater arrangement comprises at least one heater arranged in the bottom recess or the side recess of the crucible.

Abstract: A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Abstract: The present invention proposes a method to form a gradient thin film using a spray pyrolysis technique. The method comprises providing a base substrate, preparing a spray aqueous solution by mixing at least two precursor compounds comprising at least two different elements and spraying the spray aqueous solution onto the base substrate. According to the present invention, the ratio of the concentration of the at least two different elements within the spray aqueous solution is varied while performing the method. In this way, a thin film having a gradient of elemental composition over its layer thickness may be formed.

Abstract: A method to produce thin film solar cells in superstrate or substrate configuration is an efficient way to minimize the loss due to absorption in CdS layer and to eliminate the CdCl2 activation treatment step. This is achieved by applying a sacrificial metal-halide layer between the CdS-layer and the CdTe-layer of the solar cells.

Abstract: The present invention proposes a method to produce thin film CdTe solar cells having a pin-hole free and uniformly doped CdTe layer with a reduced layer thickness. The method according to the present invention is an efficient way to prevent shunting of the solar cells, to improve reliability and long-term stability of the solar cells and to provide a uniform doping of the CdTe layer. This is achieved by applying a sacrificial doping layer between a first CdTe layer having large grains and a second CdTe layer having small grains, which together form the CdTe layer of the solar cells. Furthermore it provides the possibility to eliminate the CdCl2 activation treatment step in case the sacrificial doping layer comprises a halogen.