Patents Assigned to Cutler-Hammer
  • Tantalum-gallium arsenide Schottky barrier semiconductor device
    Patent number: 4098921
    Abstract: A Schottky barrier semiconductor device wherein the semiconductor is gallium arsenide and the metal electrode is tantalum, passivated by formation of native oxides after the metal-semiconductor junction is made. Tantalum acts as a diffusion shield, enabling use of gold as a direct contact on the electrode.
    Type: Grant
    Filed: April 28, 1976
    Date of Patent: July 4, 1978
    Assignee: Cutler-Hammer
    Inventor: Joseph A. Calviello