Abstract: A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.

Abstract: A system for rapid thermal processing of a substrate in a process chamber while measuring and controlling the temperature at the substrate to establish substantially uniform substrate temperature in real time. The system includes an essentially continuous spirally-configured multizone illuminator having a plurality of substantially concentric rings of heating lamps for directing optical power toward the substrate and a fluid cooled optical reflector facing the substrate frontside and having a relatively high optical reflectivity. The illuminator can also be offset from the geometric center of the substrate. The system can also include a plurality of contact devices to provide thermal conductivity from each, or some subset, of the plurality of heating lamps. The illumination system of the present invention provides improved spatial resolution and improved thermal properties at the heating lamps.

Abstract: Ultra high-speed multi-level interconnect structure and fabrication process flows are disclosed for a semiconductor integrated circuit chip. The interconnect structures of this invention include a plurality of electrically conductive metallization levels. Each of the metallization levels includes a plurality of electrically conductive interconnect lines. A plurality of electrically conductive plugs make electrical connections between various metallization levels as well as between the metallization levels and the semiconductor devices fabricated on the semiconductor substrate. The invention further includes a free-space medium occupying at least a substantial fraction of the electrically insulating regions within the multi-level interconnect structure surrounding the interconnect lines and plugs. A top passivation overlayer hermetically seals the multi-level interconnect structure.

Abstract: A system for rapid thermal processing of a substrate in a process chamber while measuring and controlling the temperature at the substrate to establish substantially uniform substrate temperature in real time. The system includes an essentially continuous spirally-configured multizone illuminator having a plurality of substantially concentric rings of heating lamps for directing optical power toward the substrate and a fluid cooled optical reflector facing the substrate frontside and having a relatively high optical reflectivity. The illuminator can also be offset from the geometric center of the substrate. The system can also include a plurality of contact devices to provide thermal conductivity from each, or some subset, of the plurality of heating lamps. The illumination system of the present invention provides improved spatial resolution and improved thermal properties at the heating lamps.

Abstract: This invention presents an automatic calibration system and method for calibration of a substrate temperature sensor in a thermal processing equipment, such as a rapid thermal processing system. The calibration system includes a temperature-sensitive probe associated with the substrate temperature sensor to calibrate the substrate temperature sensor and an actuator to position the temperature-sensitive probe relative to the substrate during a calibration cycle. The actuator and temperature-sensitive probe of the automatic calibration system can be incorporated into the thermal processing equipment in order to maintain the thermal processing equipment cleanliness and integrity during a calibration cycle, and to allow rapid automated calibration. In the preferred embodiment of this invention, the temperature-sensitive probe and its actuator are implemented in the gas showerhead assembly of a rapid thermal processing system.

Abstract: Ultra high-speed multi-level interconnect structure and fabrication process flows are disclosed for a semiconductor integrated circuit chip. The interconnect structures of this invention include a plurality of electrically conductive metallization levels. Each of the metallization levels includes a plurality of electrically conductive interconnect lines. A plurality of electrically conductive plugs make electrical connections between various metallization levels as well as between the metallization levels and the semiconductor devices fabricated on the semiconductor substrate. The invention further includes a free-space medium occupying at least a substantial fraction of the electrically insulating regions within the multi-level interconnect structure surrounding the interconnect lines and plugs. A top passivation overlayer hermetically seals the multi-level interconnect structure.

Abstract: A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.

Abstract: An apparatus and method for wafer rotation in microelectronics manufacturing equipment is presented. The present invention combines an external stator assembly having a plurality of electromagnetic actuator coils with an internal rotor assembly having a plurality of multipolar permanent magnets or ferromagnetic coupling tabs. The rotor assembly supports the semiconductor wafer or any other substrate inside the process chamber. The electromagnetic actuator coils of the stator assembly receive a plurality of multi-phase, controlled frequency electrical currents to create magnetic fields around the actuator coils that interact with the multipolar permanent magnets or ferromagnetic coupling tabs of the rotor assembly to provide the rotational force to rotate the rotor assembly and thus, rotate the semiconductor wafer or any other substrate within the process chamber.

Abstract: A multi-zone high-density inductively-coupled plasma source includes a first individually controlled RF antenna segment for producing a plasma from a process gas. A second individually controlled coil segment is included in the ICP source for producing a plasma from a process gas. In various embodiments, more than two sets of individually controlled coil segments may be used. In one embodiment, a separate power supply may be used for each coil segment individually.Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base pressure of the plasma system.