Abstract: A process for fabricating a heating element comprising the following steps: surface protecting a silicon object by forming a protective layer by means of thermal oxidation, CVD or suitable alternative method; selectively etching away said protective layer so as to form a pattern to permit the formation of wire-like regions for a desired heater configuration; exposing the silicon object to halogenated tungsten gas at a reaction temperature of between 250.degree. and 500.degree. centigrade so as to chemically reduce a layer of tungsten onto the exposed silicon; and then coating the composite structure with a corrosion and oxidation resistant layer.