Abstract: A semiconductor structure includes at least one sub-word line driver. The sub-word line driver includes a plurality of first active areas and a main-word line. The main-word line includes a plurality of first gates and a plurality of second gates interconnected. The plurality of first gates correspond to the plurality of first active areas. An extension direction of the plurality of first gates in the main-word line and/or an extension direction of at least part of the second gates in the main-word line intersects both a first direction and a second direction. The first direction is parallel to a direction in which the first active areas extend, and the second direction is parallel to a plane in which the first active areas are located and is perpendicular to the first direction.