Abstract: One or more embodiments disclosed herein describe a nonvolatile, analog programmable resistive memory with a plurality of memory states. The programmable resistive memory includes a substrate, an IGZO resistive layer and electrical contacts. The electrical contacts are deposited on the IGZO layer, in the same plane. The electrical contacts may have various shapes in order to obtain spatially variable distances between the electrical contacts. The resistance of the resistive memory can be brought from an initial low value to a plurality of various higher values by applying electrical voltage pulses with various durations and various amplitudes and/or by applying one or more DC voltage sweeps. Also, the high voltage limit during the DC voltage sweeps could be set at values ranging from few volts to few tens of volts. In this manner, the IGZO programmable resistive memory could be set in a plurality of memory states.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.

Abstract: A sulfonated nanocellulose or sulfonated cellulose may be synthesized. A polyaniline emeraldine may be doped with the sulfonated nanocellulose or sulfonated cellulose to form a sulfonated nanocellulose-doped polyaniline or a sulfonated cellulose-doped polyaniline.

Abstract: A system and method for generating encryption keys on multiple devices, without transferring the keys. At least one sender memristor is set using at least one sender setting value. At least one sender reading value is applied to the at least one sender memristor to generate at least one sender output value. A string of characters is determined from the at least one output value based on a sender table. Data is encrypted with the string of characters. The encrypted data is transmitted to a receiver through a first channel. The at least one sender setting value or the at least one sender reading value or both is transmitted to the receiver through a second channel different from the first channel. The at least one sender setting value or the at least one sender reading value or both is applied to at least one receiver memristor to generate at least one receiver output value. A receiver table is used to determine the string of characters from the at least one receiver output value.

Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.

Abstract: A system and method used for generating encryption keys on multiple devices and for encrypted data transfer between two or multiple devices. A sender system includes at least one sender device with nonlinear I-V characteristics. A receiver system includes at least one receiver device with nonlinear I-V characteristics. The at least one sender device with nonlinear I-V characteristics generates at least one sender output value used to create a string of characters or bits or bytes or numbers. The string of characters is used to encrypt data which is sent to the receiver device. The at least one receiver device with nonlinear I-V characteristics generates at least one receiver output value, and uses the at least one receiver output value to create the string of characters from the at least one receiver output value. A receiver processing unit generates the data from the encrypted data using the string of characters.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A system and method used for generating encryption keys on multiple devices and for encrypted data transfer between two or multiple devices. A sender system includes at least one sender device with nonlinear I-V characteristics. A receiver system includes at least one receiver device with nonlinear I-V characteristics. The at least one sender device with nonlinear I-V characteristics generates at least one sender output value used to create a string of characters or bits or bytes or numbers. The string of characters is used to encrypt data which is sent to the receiver device. The at least one receiver device with nonlinear I-V characteristics generates at least one receiver output value, and uses the at least one receiver output value to create the string of characters from the at least one receiver output value. A receiver processing unit generates the data from the encrypted data using the string of characters.

Abstract: A security system may include a normally open relay between an external network connection and at least one internal network connection, a network controller, and a microcontroller. The network controller may be configured to monitor for malicious activity on an external network accessible through the external network connection. The microcontroller may be configured to cause the normally open relay to temporarily close in response to the network controller failing to detect the malicious activity for a predetermined amount of time and cause the normally open relay to remain open and generate an alert in response to the network controller detecting the malicious activity.

Abstract: A system and method for generating encryption keys on multiple devices, without transferring the keys. At least one sender memristor is set using at least one sender setting value. At least one sender reading value is applied to the at least one sender memristor to generate at least one sender output value. A string of characters is determined from the at least one output value based on a sender table. Data is encrypted with the string of characters. The encrypted data is transmitted to a receiver through a first channel. The at least one sender setting value or the at least one sender reading value or both is transmitted to the receiver through a second channel different from the first channel. The at least one sender setting value or the at least one sender reading value or both is applied to at least one receiver memristor to generate at least one receiver output value. A receiver table is used to determine the string of characters from the at least one receiver output value.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.

Abstract: A synapse crossbar array device is provided. The synapse crossbar array device includes a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs) and a plurality of IGZO resistive synapses. Each IGZO resistive synapse includes a IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines. The first electrical contact and the second electrical contact of each IGZO resistive synapse are disposed on the IGZO resistive layer of the resistive synapse. The synapse crossbar array device includes IGZO resistive synapses that have, each of them, an established resistance value. The synapse crossbar array may be fully transparent and may be integrated into the displays with which portable devices are provided.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: A security system may include a normally open relay between an external network connection and at least one internal network connection, a network controller, and a microcontroller. The network controller may be configured to monitor for malicious activity on an external network accessible through the external network connection. The microcontroller may be configured to cause the normally open relay to temporarily close in response to the network controller failing to detect the malicious activity for a predetermined amount of time and cause the normally open relay to remain open and generate an alert in response to the network controller detecting the malicious activity.

Abstract: A sulfonated nanocellulose or sulfonated cellulose may be synthesized. A polyaniline emeraldine may be doped with the sulfonated nanocellulose or sulfonated cellulose to form a sulfonated nanocellulose-doped polyaniline or a sulfonated cellulose-doped polyaniline.