Abstract: A pulsed gas discharge laser operating at an output laser pulse repetition rate of greater than 4 kHz and a method of operating same is disclosed which may comprise a high voltage electrode having a longitudinal extent; a main insulator electrically insulating the high voltage electrode from a grounded gas discharge chamber; a preionizer longitudinally extending along at least a portion of the longitudinal extent of the high voltage electrode; a preionization shim integral with the electrode extending toward the preionizer. The preionizer may be formed integrally with the main insulator. The preionization shim may substantially cover the gap between the electrode and the preionizer. The apparatus and method may comprise an aerodynamic fairing attached to the high voltage electrode to present an aerodynamically smooth surface to the gas flow.

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract: Devices are disclosed herein which may comprise a vessel; a material disposed in the vessel for creating an EUV light emitting plasma at a plasma site, the plasma generating debris; a near normal incidence EUV reflective optic disposed in the vessel; and a source of a magnetic field for deflecting debris in the vessel to protect the optic, the source positioned to interpose the optic between the source and the plasma site.

Abstract: A method and apparatus is disclosed that may comprise an ultraviolet light source; an optical element within an optical path of the light source mounted on an optical element mount; a vibration damping mechanism operatively connected to the optical element or to the mount which may comprise a wire mesh pad. The optical element may comprise a center wavelength selection optical element, which may comprise a grating, a mirror, or a prism. The vibration damping mechanism may comprise the wire mesh pad comprising an elastic interface between a driving mechanism lever arm operable to move the optical element or the mount and a driving lever arm actuator. The vibration damping mechanism may comprise a mass damping mechanism comprising a mounting plate connected to the optical element or to the mount; a damping mass; the wire mesh pad comprising an elastic interface between the mounting plate and the damping mass.

Abstract: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

Abstract: As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.

Abstract: Devices and corresponding methods of use are described herein which may comprise an enclosing structure defining a closed loop flow path and a system generating a plasma at a plasma site, e.g. laser produced plasma system, where the plasma site may be in fluid communication with the flow path. For the device, a gas may be disposed in the enclosing structure which may include an ion-stopping buffer gas and/or an etchant. A pump may be provided to force the gas through the closed loop flow path. One or more heat exchangers removing heat from gas flowing in the flow path may be provided. In some arrangements, a filter may be used to remove at least a portion of a target species from gas flowing in the flow path.

Abstract: A line narrowing method and module for a narrow band DUV high power high repetition rate gas discharge laser producing output laser light pulse beam pulses in bursts of pulses, the module having a nominal optical path are disclosed which may comprise: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a first tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic, by selecting an angle of transmission of the laser light pulse beam containing the pulse toward the dispersive center wavelength selection optic.

Abstract: In a first aspect, a lithography apparatus may comprise a mask designed using optical proximity correction (OPC), a pulsed laser source, and an active bandwidth control system configured to increase the bandwidth of a subsequent pulse in response to a measured pulse bandwidth that is below a predetermined bandwidth range and increase a bandwidth of a subsequent pulse in response to a measured pulse bandwidth that is above the predetermined bandwidth range. In another aspect an active bandwidth control system may include an optic for altering a wavefront of a laser beam in a laser cavity of the laser source to selectively adjust an output laser bandwidth in response to the control signal. In yet another aspect, the bandwidth of a laser having a wavelength variation across an aperture may be actively controlled by an aperture blocking element that is moveable to adjust a size of the aperture.

Abstract: As disclosed herein, a device may comprise an optic disposed in a near vacuum environment, the optic formed with a surface portion; a temperature controlled member formed with a surface portion conforming to the optic surface portion; and a liquid interposed between the optic surface portion and the member surface portion to conduct heat therebetween.

Abstract: An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the second seed laser.

Abstract: A gas discharge laser system bandwidth control mechanism and method of operation for controlling bandwidth in a laser output light pulse generated in the gas discharge laser system is disclosed which may comprise a bandwidth controller which may comprise an active bandwidth adjustment mechanism; a controller actively controlling the active bandwidth adjustment mechanism utilizing an algorithm implementing bandwidth thermal transient correction based upon a model of the impact of laser system operation on the wavefront of the laser light pulse being generated and line narrowed in the laser system as it is incident on the bandwidth adjustment mechanism. The controller algorithm may comprises a function of the power deposition history in at least a portion of an optical train of the gas discharge laser system, e.g., a linear function, e.g., a combination of a plurality of decay functions each comprising a respective decay time constant and a respective coefficient.

Abstract: An apparatus and method which may comprise a pulsed gas discharge laser which may comprise a seed laser portion; an amplifier portion receiving the seed laser output and amplifying the optical intensity of each seed pulse; a pulse stretcher which may comprise: a first beam splitter operatively connected with the first delay path and a second pulse stretcher operatively connected with the second delay path; a first optical delay path tower containing the first beam splitter; a second optical delay path tower containing the second beam splitter; one of the first and second optical delay paths may comprise: a plurality of mirrors defining the respective optical delay path including mirrors located in the first tower and in the second tower; the other of the first and second optical delay paths may comprise: a plurality of mirrors defining the respective optical delay path including mirrors only in one of the first tower and the second tower.

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract: A bandwidth meter method and apparatus for measuring the bandwidth of a spectrum of light emitted from a laser input to the bandwidth meter is disclosed, which may comprise an optical bandwidth monitor providing a first output representative of a first parameter which is indicative of the bandwidth of the light emitted from the laser and a second output representative of a second parameter which is indicative of the bandwidth of the light emitted from the laser; and, an actual bandwidth calculation apparatus utilizing the first output and the second output as part of a multivariable equation employing predetermined calibration variables specific to the optical bandwidth monitor, to calculate an actual bandwidth parameter.

Abstract: A pulsed gas discharge laser operating at an output laser pulse repetition rate of greater than 4 kHz and a method of operating same is disclosed which may comprise a high voltage electrode having a longitudinal extent; a main insulator electrically insulating the high voltage electrode from a grounded gas discharge chamber; a preionizer longitudinally extending along at least a portion of the longitudinal extent of the high voltage electrode; a preionization shim integral with the electrode extending toward the preionizer. The preionizer may be formed integrally with the main insulator. The preionization shim may substantially cover the gap between the electrode and the preionizer.

Abstract: A method/apparatus may comprise operating a line narrowed pulsed excimer or molecular fluorine gas discharge laser system by using a seed laser oscillator to produce an output which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module; a laser amplification stage which may comprise a ring power amplification stage; the method of operation may the steps of: selecting a differential timing between an electrical discharge between a pair of electrodes in the first laser chamber and in the second laser chamber which at the same time keeps ASE below a selected limit and the pulse energy of the laser system output light beam of pulses essentially constant.

Abstract: An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the second seed laser.

Abstract: A method and apparatus may comprise a laser light source system which may comprise a solid state laser seed beam source providing a seed laser output; a frequency conversion stage converting the seed laser output to a wavelength suitable for seeding an excimer or molecular fluorine gas discharge laser; an excimer or molecular fluorine gas discharge laser gain medium amplifying the converted seed laser output to produce a gas discharge laser output at approximately the converted wavelength. The excimer or molecular fluorine laser may be selected from a group comprising XeCl, XeF, KrF, ArF and F2 laser systems. The laser gain medium may comprise a power amplifier. The power amplifier may comprise a single pass amplifier stage, a multiple-pass amplifier stage, a ring power amplification stage or a power oscillator. The ring power amplification stage may comprise a bow-tie configuration or a race track configuration.

Abstract: An LPP EUV light source is disclosed having an optic positioned in the plasma chamber for reflecting EUV light generated therein and a laser input window. For this aspect, the EUV light source may be configured to expose the optic to a gaseous etchant pressure for optic cleaning while the window is exposed to a lower gaseous etchant pressure to avoid window coating deterioration. In another aspect, an EUV light source may comprise a target material positionable along a beam path to participate in a first interaction with light on the beam path; an optical amplifier; and at least one optic directing photons scattered from the first interaction into the optical amplifier to produce a laser beam on the beam path for a subsequent interaction with the target material to produce an EUV light emitting plasma.