Abstract: A pixel structure is described, comprising at least two selection switches coupled in series to improve the yield of the pixel. Also an array comprising such pixel structures logically organized in rows and columns is described, as well as a method for selecting a row or column of pixel structures in such an array.

Abstract: The present invention is related to an image sensor comprising an array of rows (i) and columns (j) of pixels (Xij), all the pixels of one column of the array being connected to at least one common pixel output line (Ij) having at least one memory element (Mj) and at least a first amplifying element (Aj), all these amplifying elements (Aj) being connected to a common output amplifier (D). According to one preferred embodiment, said image sensor comprises: a second amplifying element (Bj) on the output of the memory element (Mj); said common output amplifier (D) having at least two input terminals; means (S1) for switching the pixel's signal on the common output line (Ij) and the memory element's signal (Mj) to respectively third and second amplifying element (Aj and Bj) of one column; and means (S2) for switching the two output signals of the amplifying elements (Aj, Bj) of one column to respectively first and second input terminals of said common output amplifier (D).

Abstract: The present invention discloses an amplifying circuit, comprising an amplifying element with at least an input terminal and an output terminal. A signal input node is provided, the signal levels of which at least two moments in time are to be amplified by the amplifying element. At least two connecting lines are provided between the signal input node and the amplifying element, for transferring a signal from the signal input node to the input terminal of the amplifying element. A memory element is located on at least one of the connecting lines, for storing a signal level of the signal input node at a moment in time, and a switching element is disposed on each connecting line, between the memory element and the input terminal of the amplifying element if a memory element is provided on the connecting line, for consecutively connecting signal levels of the signal input node at different moments in time to the same amplifying element.

Abstract: A semiconductor detector of electromagnetic radiation which utilizes a dual-purpose electrode which extends significantly beyond the edge of a photodiode. This configuration reduces the sensitivity of device performance on small misalignments between manufacturing steps while reducing dark currents, kTC noise, and “ghost” images. The collection-mode potential of the dual-purpose electrode can be adjusted to achieve charge confinement and enhanced collection efficiency, reducing or eliminating the need for an additional pinning layer. Finally, the present invention enhances the fill factor of the photodiode by shielding the photon-created charge carriers formed in the substrate from the potential wells of the surrounding circuitry.

Abstract: An active pixel comprises a sensor circuit for collecting radiation induced charges and transducing them to a measurement signal corresponding to the amount of charge collected, and a capacitor element with two nodes, where the measurement signal is present on a node of the capacitor element. The memory circuit is clocked, i.e. driven by a pulsed signal. The pulse on the memory circuit will rise the reset level at the output, which is lowered due to threshold voltage losses in the active pixel circuit, thus restoring a large signal swing. Arrays of the pixels are described, as well as a method for reading out such a pixel.

Abstract: An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers from the source as they are generated. At least one doped or inverted region of a first conductivity is provided in or on the substrate for storing the carriers before read-out. At least one non-carrier storing, planar current flow, carrier transport pathway is provided from or through the carrier collecting region to the at least one doped or inverted region to transfer the carriers without intermediate storage to the read-out electronics.

Abstract: A method is disclosed for obtaining a read-out signal of a pixel having at least a photosensitive element with a charge storage node. Charge carriers are converted from radiation impinging on the photosensitive element. While acquiring charge carriers on said charge storage node, after a time period at least one reset pulse with a predetermined amplitude is applied on said charge storage node, said pulse resetting incompletely the charge carriers acquired at the moment of applying said pulse; and thereafter charge carriers are further acquired on said charge storage node.