Abstract: A high-voltage metal-oxide-semiconductor field-effect transistor applied to a high-voltage range includes a substrate, an epitaxial layer, a plurality of first doped regions, a plurality of first trenches, a plurality of second trenches, a plurality of second doped regions, and a metal layer. The epitaxial layer is disposed on the substrate and used as a drain electrode. The plurality of first doped regions are disposed in the epitaxial layer. The plurality of first trenches are disposed on the plurality of doped regions in a spaced manner. Each of the first trenches has a first trench oxide layer and a first semiconductor layer which is connected to a source electrode. The plurality of second trenches are disposed between each of the first trenches in a spaced manner. Each of the second trenches has a second trench oxide layer and a second semiconductor layer which is connected to a gate electrode.