Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.
Type:
Grant
Filed:
September 23, 2004
Date of Patent:
July 4, 2006
Assignee:
Czee, Inc.
Inventors:
John Adam Edmond, Kathleen Marie Doverspike, Hua-shuang Kong, Michael John Bergmann