Abstract: In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. A method for creating glyphs is also disclosed, in which a two-dimensional dosage map of one or more shots is calculated, and the list of shots and the calculated dosage map are stored for later reference.

Abstract: A method for fracturing or mask data preparation or proximity effect correction of a desired pattern to be formed on a reticle is disclosed in which a plurality of variable shaped beam (VSB) shots are determined which can form the desired pattern. Shots within the plurality of VSB shots are allowed to overlap each other. Dosages of the shots may also be allowed to vary with respect to each other. The union of the plurality of shots may deviate from the desired pattern. The plurality of shots may be determined such that a pattern on the surface calculated from the plurality of shots is within a predetermined tolerance of the desired pattern. In some embodiments, an optimization technique may be used to minimize shot count. In other embodiments, the plurality of shots may be optionally selected from one or more pre-computed VSB shots or groups of VSB shots.

Abstract: A method for optical proximity correction of a design of a pattern on a surface is disclosed with the method comprising the steps of inputting desired patterns for the substrate and inputting a set of characters some of which are complex characters that may be used for forming the patterns on the surface. A method of creating glyphs is also disclosed.

Abstract: A method is disclosed for using non-overlapping variable shaped beam (VSB) shots in the design and manufacture of a reticle, where the union of the plurality of shots deviates from the desired pattern. Methods are described for fracturing or mask data preparation or proximity effect correction of a desired pattern to be formed on a reticle; for forming a pattern on a reticle using charged particle beam lithography; and for optical proximity correction (OPC) of a desired pattern. Dosages of the shots may be allowed to vary with respect to each other. The plurality of shots may be determined such that a pattern on the surface calculated from the plurality of shots is within a predetermined tolerance of the desired pattern. In some embodiments, an optimization technique may be used to minimize shot count.

Abstract: A method for manufacturing a surface, the surface having a multiplicity of slightly different patterns, is disclosed with the method comprising the steps of designing a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. A system for manufacturing a surface is also disclosed.

Abstract: A method for forming circular patterns on a surface using a character projection (CP) charged particle beam writer is disclosed, wherein circular patterns of different sizes may be formed using a single CP character, by varying dosage. A method for forming circular patterns on a surface using a variable shaped beam (VSB) charged particle beam writer is also disclosed, wherein the dosages of the shots may vary, and wherein the union of the shots is different than the set of target patterns. A method for forming circular patterns on a surface using a library of glyphs is also disclosed, wherein the glyphs are pre-calculated dosage maps that can be formed by one or more charged particle beam shots.

Abstract: The present invention increases the number of characters available on a stencil for charged particle beam lithography. A stencil for charged particle beam lithography is disclosed, comprising two character projection (CP) characters, wherein the blanking areas for the two CP characters overlap. A stencil is also disclosed comprising two CP characters with one or more optional characters between the two characters, wherein the optional characters can form meaningful patterns on a surface only in combination with one of the two characters. A stencil is also disclosed wherein the blanking area of a CP character extends beyond the boundary of the stencil's available character area. Methods for design of the aforementioned stencils are also disclosed.

Abstract: A method for particle beam lithography, such as electron beam (EB) lithography, includes predefining a stencil design having a plurality of cell patterns with information from a cell library, fabricating the stencil design, synthesizing a functional description into a logic circuit design after predefining the stencil design so that one or more characteristics of the stencil design are considered during synthesizing of the functional description into the logic circuit design, optimizing the logic circuit design, generating a layout design from the optimized logic circuit design, and forming the logic circuit on a substrate according to the stencil design and the layout design.