Patents Assigned to Daido Hoxan Inc.
  • Patent number: 6423121
    Abstract: A nitrogen adsorbent comprising a crystalline X zeolite having a faujasite structure with an SiO2/Al2O3 ratio of less than 3.0, wherein the crystal contains at least one trivalent element of the group consisting of Fe, B and Ga and (AlO4)5− tetrahedral units thereof associated with cations. Although the adsorbent contains a designated trivalent element in the zeolite, it maintains the number of cation sites contributing to adsorption, has an excellent separation performance of nitrogen and oxygen, and exhibits excellent heat resistance. Further, when the nitrogen adsorbent of the present invention is used in such a particular manner that it adsorbs nitrogen after being heated under a vacuum, adsorption performance is improved.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: July 23, 2002
    Assignee: Daido Hoxan Inc.
    Inventors: Hiromi Kiyama, Haruo Yoshioka, Hisanao Jo, Jin-Bae Kim
  • Patent number: 6293109
    Abstract: A pulse tube refrigerator which enables holding a cooling temperature without the use of a heater and the like. The pulse tube refrigerator employs a working gas which has a liquefying temperature within the range of an operating temperature of the pulse tube refrigerator.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: September 25, 2001
    Assignee: Daido Hoxan Inc.
    Inventors: Atsushi Miyamoto, Yasuhiro Kakimi, Shingo Kunitani, Daisuke Ito
  • Patent number: 6284661
    Abstract: A method and an apparatus for cutting a wafer from a crystalline ingot, by directing a stream or streams of etching gas at the crystalline ingot in a vacuum. Waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.
    Type: Grant
    Filed: April 4, 1997
    Date of Patent: September 4, 2001
    Assignee: Daido Hoxan Inc.
    Inventors: Takashi Yokoyama, Kazuma Yamamoto, Masato Yamamoto, Takahiro Mishima, Go Matsuda, Shigeki Itou
  • Patent number: 6105417
    Abstract: Gas sensor materials composed of carbon mixture or metal-containing carbon mixture obtained as evaporated matter by arc discharge which occurs by passing an alternating current or a direct current with electric current density of 0.8 to 3.5 A/mm.sup.2 on discharge surfaces of carbon electrodes or metal-containing carbon electrodes in an inert gas under a pressure of 0.1 to 600 torr.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: August 22, 2000
    Assignees: Osaka Prefecture, Daido Hoxan Inc.
    Inventors: Toshikazu Nosaka, Yoshiaki Sakurai, Kazuki Natsukawa, Tsutomu Yotsuya, Shunsaku Kawabata, Katsumi Nishida, Kazuhiro Nishikawa, Kiyohiro Mori, Hiromi Kiyama, Yoshinori Omori
  • Patent number: 6082136
    Abstract: There are included a fractionating tower for liquefying and separating the compressed air cooled by heat exchangers to an ultralow temperature, a liquid oxygen takeout path for guiding the liquid oxygen in the above-mentioned fractionating tower to the above-mentioned heat exchangers to gasify so as to become a gasified oxygen, and a product oxygen gas takeout path which extends from the front end of the above-mentioned liquid oxygen takeout path and increases the temperature of the above-mentioned gasified oxygen so as to obtain a product oxygen gas, the above-mentioned liquid oxygen takeout path being provided with an oxygen gas pressurizing pump, and the above-mentioned product oxygen gas takeout path on the side upstream the above-mentioned heat exchangers being provided with an expansion turbine.
    Type: Grant
    Filed: February 7, 1997
    Date of Patent: July 4, 2000
    Assignee: Daido Hoxan Inc.
    Inventor: Akira Yoshino
  • Patent number: 5972795
    Abstract: A method and an apparatus for producing a wafer from a crystalline ingot, wherein the method supplies an etching gas, having a high etching property for at least one constituent of the crystalline ingot, in a state of a molecular beam stream on a predetermined part of the crystalline ingot to be processed, volatilizing the predetermined part gradually from the ingot, and then removing the predetermined part entirely so as to cut the wafer from the ingot. According to the method, waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.
    Type: Grant
    Filed: April 4, 1997
    Date of Patent: October 26, 1999
    Assignee: Daido Hoxan Inc.
    Inventors: Takashi Yokoyama, Kazuma Yamamoto, Masato Yamamoto, Takahiro Mishima, Go Matsuda, Shigeki Itou
  • Patent number: 5912186
    Abstract: A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.
    Type: Grant
    Filed: November 21, 1996
    Date of Patent: June 15, 1999
    Assignee: Daido Hoxan, Inc.
    Inventors: Akira Yoshino, Takashi Yokoyama, Yoshinori Ohmori, Kazuma Yamamoto
  • Patent number: 5792282
    Abstract: A method of carburizing austenitic stainless steel comprising the steps of holding austenitic stainless steel in a fluorine- or fluoride-containing gas atmosphere with heating prior to carburizing and carburizing the austenitic stainless steel at a temperature not more than 680.degree. C. wherein said austenitic stainless steel is stable austenitic stainless steel having 1 to 6 weight % molybdenum or 13 to 25 weight % chromium, wherein a carburized hard layer having corrosion resistance superior to base material forms and austenitic stainless steel products obtained thereby.
    Type: Grant
    Filed: May 13, 1996
    Date of Patent: August 11, 1998
    Assignee: Daido Hoxan, Inc.
    Inventors: Masaaki Tahara, Haruo Senbokuya, Kenzo Kitano, Tadashi Hayashida
  • Patent number: 5698228
    Abstract: There is provided a skin substitute that can suitably be used for covering the surface of a damaged skin area which is typically a wound produced by a traumatic local loss of the skin of the human body as a result of a burn or some other cause of damage. It is a skin substitute of a laminate comprising a squid chitin sheet and a fish skin collagen coat layer, which may be a salmon skin collagen coat layer. Such a skin substitute effectively exploits the suppleness and the effect of proving an environment for encouraging the production of lysozyme and defending the wound of squid chitin and, at the same time, compensate the disadvantage of poor adhesion of fibroblast cells that operate for curing the wound.
    Type: Grant
    Filed: June 25, 1996
    Date of Patent: December 16, 1997
    Assignees: Hokkaido Government, Daido Hoxan Inc.
    Inventors: Mitsuo Takai, Yuichi Shimizu, Josuke Shimizu, Kunio Yamazaki, Yoshiteru Kumabayashi, Hideki Shimizu, Kunishige Yamada
  • Patent number: 5650022
    Abstract: A method of nitriding steel which comprises reacting the steel surface with nitrogen so as to form a hard nitrided layer, and, prior to nitriding, holding steel under a gas atmosphere containing fluorine compound gas or fluorine gas and also containing air of 0.5 to 20 volume % of the total or oxygen gas of 0.1 to 4 volume % of the total with heating, whereby occurrence of uneven nitriding is prevented and at the same time savings in consumption of expensive fluorine- or fluoride-containing gas can be realized.
    Type: Grant
    Filed: May 16, 1996
    Date of Patent: July 22, 1997
    Assignee: Daido Hoxan Inc.
    Inventors: Kenzo Kitano, Akio Hashigami, Takashi Muraoka
  • Patent number: 5649433
    Abstract: An improved cryogenic liquefied gas container, or a so-called cold evaporator (CE) for containing a plurality of different liquefied gases such as oxygen and nitrogen gases can be installed on a site with a limited surface area and can store the gases at a substantially equal and constant temperature level to ensure a stable gas supply to consumers that may include medical facilities and manufacturing plants. A plurality of inner tanks 4 are vertically arranged and surrounded by an insulation layer 3 in an outer shell 2 in order to economically utilize the site. The temperature of the high boiling point liquefied gas LG1 contained in the upper inner tank 4a and hence the internal pressure of the upper inner tank are stabilized by means of a heat exchanger section 11 to which the low boiling point liquefied gas LG.sub.
    Type: Grant
    Filed: April 30, 1996
    Date of Patent: July 22, 1997
    Assignee: Daido Hoxan Inc.
    Inventors: Hiroaki Suzuki, Yuji Morimoto, Yasuo Tanaka, Taturu Yamauchi
  • Patent number: 5593510
    Abstract: A method of carburizing austenitic metal comprising the steps of holding austenitic metal in a fluoride-containing gas atmosphere with heating prior to carburizing and carburizing the austenitic metal at a temperature not more than 680.degree. C. and austenitic metal products obtained thereby.
    Type: Grant
    Filed: April 17, 1995
    Date of Patent: January 14, 1997
    Assignee: Daido Hoxan, Inc.
    Inventors: Masaaki Tahara, Haruo Senbokuya, Kenzo Kitano, Tadashi Hayashida
  • Patent number: 5556483
    Abstract: A method for carburizing austenitic metal comprising fluorinating the austenitic metal and consecutive carburizing at a low temperature not more than 680.degree. C. A carburizing temperature can be lowered by such a fluorination. As a result, carbide of chrome component in the austenitic metal can be prevented from depositing. That is, much chrome component remains in the austenitic metal. Therefore, the austenitic metal surface can be hardened and also superior anti-corrosion property can be maintained.
    Type: Grant
    Filed: October 19, 1994
    Date of Patent: September 17, 1996
    Assignee: Daido Hoxan, Inc.
    Inventors: Masaaki Tahara, Haruo Senbokuya, Kenzo Kitano, Tadashi Hayashida, Teruo Minato
  • Patent number: 5481878
    Abstract: A high pressure valve and low pressure valve are positioned at a hot end of the pulse tube and two direction valves are positioned respectively between the high pressure reservoir, the low pressure reservoir and the pulse tube. In the pulse tube refrigerator wherein the cold is produced by time-phase displacement with orifice, an irreversible loss is caused when the gas passes through the orifice. However, the refrigeration in this invention comprising high and low pressure reservoirs, and open and close valves, all the energy can be converted without loss in adiabatic expansion of the gas in the pulse tube, theoretical efficiency is 100%.
    Type: Grant
    Filed: May 16, 1994
    Date of Patent: January 9, 1996
    Assignee: Daido Hoxan Inc.
    Inventor: Zhu Shaowei
  • Patent number: 5447181
    Abstract: A loom guide bar blade for automatic weaving machinery such as an air or water jet loom wherein the surface of the blade which contacts yarn is nitrided to form a nitrided hardened layer. When this blade is used in automatic high-speed weaving machinery, wearing and the like at contacting points of the blade with the yarn are prevented. As a result yarn fluffing from its being abraded by a roughened blade surface is minimized.
    Type: Grant
    Filed: December 7, 1993
    Date of Patent: September 5, 1995
    Assignee: Daido Hoxan Inc.
    Inventors: Masaaki Tahara, Haruo Senbokuya, Kenzo Kitano, Tadashi Hayashida, Teruo Minato