Abstract: A film-forming method of an osmium film includes disposing a metal plate in a chamber; introducing OsO4 gas at a flow rate of 0.1 to 3 cc/min and an inert gas for maintaining discharge into the chamber while maintaining the pressure in the chamber to 13 to 40 Pa; and forming an osmium film on the surface of the metal plate by turning the gas in the chamber into plasma using radio frequency output power with the density of 0.25 to 2.0 W/cm2.

Abstract: A method of manufacturing an aperture plate using a plasma excitation chemical vapor deposition (CVD) device includes the steps of placing a metal plate in a vacuum chamber of the CVD device; discharging air inside the vacuum chamber; charging a mixture of a gas containing at least osmium and a gas containing a hydrogen gas; adjusting a pressure of the vacuum chamber at a predetermined level; and generating plasma inside the vacuum chamber. An electrically conductive amorphous coating having a dense structure is uniformly formed over a surface and an interior of a micro-hole of the aperture plate. Also, it is possible to form an osmium coating having a high purity and a low impurity content with good repeatability.