Patents Assigned to Dalian Lumei Optoelectronics Corporation
  • Window for gallium nitride light emitting diode
    Patent number: RE42636
    Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: August 23, 2011
    Assignee: Dalian Lumei Optoelectronics Corporation
    Inventors: John Chen, Bingwen Liang, Robert Shih