Patents Assigned to Dalian Luming Science and Technology Group Co. Ltd.
  • GaN light emitting diode with conductive outer layer
    Patent number: 6897494
    Abstract: A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: May 24, 2005
    Assignee: Dalian Luming Science and Technology Group Co. Ltd.
    Inventors: John Chen, Bingwen Liang, Robert Shih