Patents Assigned to Dallan Luming Science & Technology Group Co., Ltd.
  • Patent number: 6888171
    Abstract: A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: May 3, 2005
    Assignee: Dallan Luming Science & Technology Group Co., Ltd.
    Inventors: Heng Liu, Changhua Chen