Patents Assigned to Defence Research & Development Organisation
  • Patent number: 10728139
    Abstract: Methods and apparatuses for building a programmable dataplane are described. Specifically, the programmable dataplane can work on a list of identifiers, such as those part of OpenFlow 1.5. Specifically, the programmable dataplane can be built by creating a virtual network graph at a controller node using binary identifiers such that a node is broken into an n-ary tree and the tree has 1×2 or 1×1 nodes.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: July 28, 2020
    Assignees: Indian Institute of Technology, Bombay, Defence Research & Development Organisation
    Inventors: Ashwin Gumaste, Aniruddha Kushwaha, Sidharth Sharma, Mahesh Jagtap
  • Patent number: 10634093
    Abstract: The present disclosure relates to a dismantleable mandrel assembly and a method of molding solid propellant grains with deep fin cavities whose major transverse dimensions are larger than casing opening dimensions in a monolithic rocket motor. The mandrel assembly comprises a base mandrel, a core mandrel insertable into the base mandrel and a plurality of fin molds attachable onto the base mandrel in a circular pattern about the motor axis. The plurality of longitudinal fin cavities is configured with forward swept leading and trailing edges. The manufacturing technique involves assembling and disassembling the mandrel components before propellant casting and after propellant curing respectively in a specific sequence. With minimum number of components and critical joints the method assures reduced quantum of explosive hazard in propellant grain manufacturing for high performance solid rocket motors.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: April 28, 2020
    Assignee: Chairman, Defence Research & Development Organisation
    Inventor: Anish Bala Krishnan
  • Patent number: 10018647
    Abstract: The present disclosure relates to a velocity interferometer. The interferometer described herein, comprises of two optical cells, one partially containing a liquid. The light entering the interferometer is amplitude split and made to propagate through the two cells in such a way that the apparent path lengths of the beams are equal, thereby fulfilling the condition necessary for obtaining single wide fringe in the interference pattern of the two beams. However, due to difference in the physical path traversed by the two beams, a finite delay time exists between them. The two beams, after reflection from end-mirrors or cube corner prisms in the two cells are recombined to form interference fringe patterns on active areas of multiple detectors. Doppler shifted light resulting from reflection of light from a moving projectile generate fringe shifts on the detector planes thereby producing voltage signals proportional to instantaneous velocity of fast moving projectile.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: July 10, 2018
    Assignee: Defence Research Development Organisation
    Inventors: Devinder Pal Ghai, Het Ram Swami, Anil Kumar Maini
  • Patent number: 9017580
    Abstract: The present invention relates to polymer composite materials, more particularly relates to composite materials with tailor made surface electrical resistivities in the range of 109 to 10?1 ?/sq. and process of making the same. The process for preparing Fiber Reinforced Polymeric (FRP) Composite, said process comprising acts of homogeneously mixing 1-30% by weight of different electrically conducting fillers in matrix resin system to obtain resin mix; wetting dry preforms using the resin mix; compacting the wetted preforms to obtain green composite; curing the green composite; and post-curing the cured composite to prepare the FRP Composite.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: April 28, 2015
    Assignee: The Director General, Defence Research & Development Organisation (DRDO)
    Inventors: Samudra Dasgupta, Madishetty Narayana Rao Jagdish Kumar, Sundaram Sankaran
  • Patent number: 8800418
    Abstract: The present invention relates to launching system, more particularly relates to mobile launching system for missiles. The mobile missile launch system comprising a vehicle (14) having a chassis structure adapted to carry the launch system; a mounting frame (16) comprising predetermined truss framework mounted onto the chassis structure; plurality of sliding mechanisms mounted at rear end of the mounting frame (16); plurality of canisters (43) mounted onto said beam (22) and plurality of missiles (11) ensconced within the canisters (43); plurality of containers (42) enclosing said canisters (43) and are connected to the saddles (32, 34) for linear movement; plurality of resting units (27) abutting to rear end of the canisters (43) and are adapted to move linearly to transfer reaction forces from said missiles (11) to ground.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: August 12, 2014
    Assignee: Director General, Defence Research & Development Organisation
    Inventors: Siddalingappa Guruprasad, Shreedhar Aravind Katti, Alasani Prasad Goud, Vikas Narayan Waghmare, Sanjay Kumar, Atul Gupta, Ravindra Sudhakar Khire, Tushar Kant Santosh, Bimal Gautam, Paras Ram
  • Patent number: 8785133
    Abstract: A process of detection of pandemic swine flu virus H1N1 type in a sample is provided herein. Also provided are highly specific oligonucleotides useful for rapid detection of swine flu virus in a sample, as well as swine flu virus specific isothermal gene amplification assay for early clinical diagnosis of H1N1 human patients.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: July 22, 2014
    Assignee: Defence Research & Development Organisation
    Inventors: Manmohan Parida, Jyoti Shukla, Santhosh Sannarangiah, Sashi Sharma, Venkata Lakshmana Putcha Rao, Rajagopalan Vijayaraghavan
  • Patent number: 8721926
    Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 13, 2014
    Assignee: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Patent number: 8646443
    Abstract: An electrochemically reacting composition which can be utilized as a source of heat as well as hydrogen, comprising the active materials aluminum, magnesium and iron, a filler material such as a silica sand, a hydrogen scavenger such as potassium permanganate, additives such as sodium silicate and an electrolyte such as sodium chloride.
    Type: Grant
    Filed: April 7, 2003
    Date of Patent: February 11, 2014
    Assignee: The Additional Director (IPR), Defence Research & Development Organisation
    Inventors: Pramil C. Deb, Arun Kumar Shah, Daya Lama
  • Publication number: 20130206657
    Abstract: This invention relates to the field of human waste handling, treatment and disposal in mobile public carriers. In particular the invention is directed to a self- sustained bio-digester for onboard degradation of human waste.
    Type: Application
    Filed: May 6, 2011
    Publication date: August 15, 2013
    Applicant: Director General, Defence Research & Development Organisation
    Inventors: Dev Vrat Kamboj, Lokendra Singh, Vichitra Kumar Gangwar, Rajagopalan Vijayaraghavan
  • Patent number: 8485315
    Abstract: The present invention relates to an acoustic energy reflector comprising a microcellular rubber as inner liner and a fiber reinforced composite as outer casing, in a core-shell assembly, wherein the said microcellular rubber is selected from the group of natural and synthetic rubbers having glass transition temperature below 0° C. and the resin for the fiber reinforced composite is selected from a group having a glass transition temperature at least 50° C.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: July 16, 2013
    Assignee: Defence Research & Development Organisation Ministry of Defence
    Inventors: Sasikumar Krishnamoorthy, Manoj Nalanda Rajagopalan, Gopalan Suresh Nair, Mukundan Thekkekara
  • Publication number: 20130082216
    Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.
    Type: Application
    Filed: September 14, 2012
    Publication date: April 4, 2013
    Applicant: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Patent number: 8399677
    Abstract: The invention provides a method for the preparation of fentanyl comprising: (a) reacting 4-piperidone hydrochloride monohydrate with aniline in presence of reducing environment to produce 4-anilinopiperidine (4-AP), (b) reacting the 4-AP as obtained from step (a) with phenethyl halide under reflux conditions in highly alkaline medium to give 4-anilino-N-phenethylpiperidine, and (c) converting the 4-anilino-N-phenethylpiperidine to fentanyl by reacting with propionyl chloride in presence of halogenated hydrocarbons, then isolating fentanyl by solvent extraction and purifying by crystallization from petroleum ether at a temperature ranging from 60-80° C.
    Type: Grant
    Filed: March 9, 2009
    Date of Patent: March 19, 2013
    Assignee: Defence Research & Development Organisation
    Inventors: Pradeep Kumar Gupta, Laxmi Manral, Kumaran Ganesan, Ramesh Chandra Malhotra, Krishnamurthy Sekhar
  • Publication number: 20120261623
    Abstract: The present invention relates to polymer composite materials, more particularly relates to composite materials with tailor made surface electrical resistivities in the range of 109 to 10?1 ?/sq. and process of making the same. The process for preparing Fibre Reinforced Polymeric (FRP) Composite, said process comprising acts of homogeneously mixing 1-30% by weight of different electrically conducting fillers in matrix resin system to obtain resin mix; wetting dry preforms using the resin mix; compacting the wetted preforms to obtain green composite; curing the green composite; and post-curing the cured composite to prepare the FRP Composite.
    Type: Application
    Filed: November 22, 2010
    Publication date: October 18, 2012
    Applicant: The Director General ,Defence Research & Development Organisation
    Inventors: Samudra Dasgupta, Madishetty Narayana Rao Jagdish Kumar, Sundaram Sankaran
  • Patent number: 8287951
    Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: October 16, 2012
    Assignee: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Patent number: 7732631
    Abstract: An improved process for the preparation of 2-chlorobenzylidenemalononitrile (CS) comprising of the steps of: preparing malononitrile suspension by adding 5-20% (wt %) preferably 12-14% malononitrile to water while constantly stirring and then adding 0.05-0.5% (v/v) preferably 0.1-0% of a catalyst like piperidine, pyridine, 2-picoline, 3-picoline, 4-picoline or morpholine preferably piperidine piperidine with constant stirring at 20-30° C.; condensing the malononitrile suspension prepared in step (a) with 2-chlorobenzaldehyde by adding 10-15% (w/v) preferably 25-30%, of 2-chlorobenzaldehyde cover a period at 30-45 minutes so that the temperature of the reaction mixture remains below 50° C., constantly stirring for 20-40 minutes, then filtering the CS and drying it at 20-30° C. under water vacuum for 3-5 hrs.
    Type: Grant
    Filed: April 7, 2005
    Date of Patent: June 8, 2010
    Assignee: Director General, Defence Research & Development Organisation
    Inventors: Ambuja Pande, Ramesh Chandra Malhotra, Kumaran Ganesan, Krishnamurthy Sekhar, Vinita Dubey
  • Patent number: 7680270
    Abstract: A method of elliptic curve encryption includes, (a) selecting an elliptic curve Ep (a,b) of the form y2=x3+ax+b mod (p) wherein a and b are non-negative integers less than p satisfying the formula 4 a3+27b2 mod (p) not equal to 0; (b) generating a large 160 bit random number by a method of concatenation of a number of smaller random numbers; (c) generating a well hidden point G (x,y) on the elliptic curve Ep (a,b) by scalar multiplication of a point B (x,y) on the elliptic curve with a large random integer which further includes the steps: (i) converting the large random integer into a series of powers of 231; (ii) converting each coefficient of 231 obtained from above step into a binary series; (iii) multiplication of binary series obtained from steps (i) and (ii) above with the point B (x,y) on the elliptic curve; (d) generating a private key nA (of about >=160 bit length); (e) generating a public key PA (x,y) given by the formula PA (x,y)=(nA?G (x,y)) mod (p); (f) encrypting the input message MSG; (g) d
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: March 16, 2010
    Assignee: The Additional Director (IPR), Defence Research & Development Organisation
    Inventor: Gopala Krishna Murthy Srungaram
  • Patent number: 7615672
    Abstract: A process for the preparation of n-heneicosane is disclosed. The process comprises (a) reacting 2,4-alkaneanedione with 1-bromooctadecane in absolute ethanol in the presence of 18-crown-6 as catalyst to produce 2-heneicosanone; and (b) reducing said 2-heneicosanone using hydrazine hydrate and potassium hydroxide in ethylene glycol to obtain n-heneicosane.
    Type: Grant
    Filed: June 23, 2005
    Date of Patent: November 10, 2009
    Assignee: Defence Research & Development Organisation
    Inventors: Kumaran Ganesan, Ramesh Chandra Malhotra, Ambati Narasimha Rao, Pradeep Kumar Gupta, Asheesh Kumar Jain, Shri Prakash, Krishnamurthy Sekhar
  • Publication number: 20090218550
    Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.
    Type: Application
    Filed: June 27, 2006
    Publication date: September 3, 2009
    Applicant: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Patent number: 7518029
    Abstract: A process for the complete destruction of gelled sulphur mustard (SM), comprising the steps of: (a) dissolving gelled sulphur mustard (SM) in organic solvent such as 2-chloroethanol, methanol, methyl cellosolve or mixtures of these to obtain a clear mixture, (b) incinerating the clear gelled sulphur mustard solvent mixture obtained from step (a); (c) dissolving residual gelled SM obtained from step (c) into non-toxic products; (d) chemically converting dissolved SM obtained from step (c) into non-toxic products.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: April 14, 2009
    Assignee: Defence Research & Development Organisation
    Inventors: Krishnamurthy Sekhar, Ramesh Chandra Malhotra, Balwant Singh Batra, Kumaran Ganesan
  • Publication number: 20060165231
    Abstract: A method of elliptic curve encryption includes, (a) selecting an elliptic curve Ep (a,b) of the form y2=x3+ax+b mod (p) wherein a and b are non-negative integers less than p satisfying the formula 4 a3+27b2 mod (p) not equal to 0; (b) generating a large 160 bit random number by a method of concatenation of a number of smaller random numbers; (c) generating a well hidden point G (x,y) on the elliptic curve Ep (a,b) by scalar multiplication of a point B (x,y) on the elliptic curve with a large random integer which further includes the steps: (i) converting the large random integer into a series of powers of 231; (ii) converting each coefficient of 231 obtained from above step into a binary series; (iii) multiplication of binary series obtained from steps (i) and (ii) above with the point B (x,y) on the elliptic curve; (d) generating a private key nA (of about >=160 bit length); (e) generating a public key PA (x,y) given by the formula PA (x,y)=(nA-G (x,y)) mod (p); (f) encrypting the input message MSG; (g) d
    Type: Application
    Filed: October 20, 2003
    Publication date: July 27, 2006
    Applicant: The Additional Director (IPR) Defence Research & Development Organisation
    Inventor: Gopala Krishna Srungaram