Abstract: An avalanche photodetector (APD) is proposed, wherein a photoconverter and at least one avalanche amplifier are located on the same wafer, its multiplication layer covers the entire surface of the conductive wafer, and its contact layer is formed in some region of the multiplication layer. Outside the contact layer, the multiplication layer functions as a photoconverter, thus facilitating the photocarriers getting into the avalanche amplifier. A dielectric-filled circular groove surrounding the avalanche amplifier suppresses photoelectric communication noises generated by neighboring avalanche amplifiers, thus allowing to manufacture multi-channel avalanche instruments with higher threshold sensitivity.

Abstract: An APD includes a photoconverter and at least one avalanche amplifier of the photocurrent, the amplifier having two layers—a contact layer and a multiplication layer, wherein the multiplication layer is formed on top of the entire conductive wafer, while the contact layer of at least one avalanche amplifier is formed on top of a certain area of the multiplication layer. Meanwhile, outside the contact layer, the multiplication layer functions as a photoconverter. This makes it possible for photocarriers to get into the avalanche amplifier effectively and unimpeded. In order to mitigate the influence of parasite near-surface charge carriers on the avalanche amplifier, its multiplication region is deepened in relation to the upper surface of the photoconverter region. The proposed APD embodiment with less dark current seeping from peripheral areas of the instrument provides higher threshold sensitivity that allows it be on par with state of the art.