Abstract: An intercalation doping apparatus including: a reactor chamber where single or multiple wafers or substrates (SoMWoSubs) are disposed within the reactor chamber, where SOMWoSubs have a diameter or a side distance from 25 mm to 450 mm; a heater, where the heater is configured to provide heat to the SOMWoSubs disposed within the reactor chamber, where the SoMWoSubs include a temperature from 25° C. to 500° C.; where pressure is applied to at least one surface of the SOMWoSubs disposed within the reactor chamber within a range of 2 bar to 500 bar; and a dopant application apparatus, where the dopant application apparatus includes at least valves and tubing which bring dopants from outside to within the reactor chamber and includes at least a dopant crucible disposed within the reactor chamber, where the dopants include material in solid, liquid, or gaseous phase, and where the dopants include intercalation doping agents.

Abstract: A method of forming transistor interconnects on top of a semiconductor device substrate, the method including: providing a semiconductor device substrate with CMOS transistors and an inter-layer dielectric atop the CMOS transistors; depositing a metal (Ni, Co, Ru, or Mo) catalyst layer atop the inter-layer dielectric; depositing a diffusion material including carbon atop the metal catalyst layer; then loading the substrate into a process chamber onto a heatable bottom platen; a heatable top platen applies a mechanical pressure to the substrate; and then forming graphene disposed at an interface of the inter-layer dielectric and the metal catalyst layer, and where the process chamber is a part of a modified or unchanged commercial bonding tool, hot-press tool, or pressure and temperature-controlled reactor.

Abstract: A conducting thin film structure or pattern which facilitates the insertion of dopant atoms, ions, or molecules into layered 2D materials including: a layered 2D material, an electrically isolative material disposed below the layered 2D material, where the layered 2D material has at least one layer, where the layered 2D material includes slots, where the slots include etched regions where the layered 2D material is at least partially etched away, where the etched regions include a width greater than 0.5 nm and less than 1 meter, where the layered 2D material is intercalation doped with at least one dopant, where the at least one dopant includes at least one intercalation doping agent, where the layered 2D material with the slots is fully intercalation doped (stage-1 intercalation) or partially intercalation doped, where a first portion of the layered 2D material is doped p-type, and a second portion is doped n-type.

Abstract: A diffusion-couple synthesis method using a graphene synthesis tool (GST) including: providing a substrate-load (SL) which includes first-prepared substrate (fPS) and second-prepared-substrate (sPS), where fPS includes a first-carbon-source (fCS), a first-sacrificial-diffusion layer (fSDL), and a first-device-level (fDL), where a first-dielectric-layer (fDiLy) is disposed atop fDL, where fSDL is disposed directly atop fDiLy, where fCS is disposed directly atop the fSDL, and where the sPS includes a secondCS, a secondSDL, and a secondDL, where secondDL is disposed atop the secondDL, where the secondSDL is disposed atop secondDiLy, where secondCS is disposed atop secondSDL; providing a GST capable of applying pressure and temperature to SL within a process chamber (PC); placing SL within PC; applying the pressure and the temperature to SL, where sPS is inverted and disposed above fPS, where fCS is in direct contact with secondCS; forming graphene at a first interface between the fDiLy and the fSDL and at a seco

Abstract: A diffusion-couple synthesis method using a graphene synthesis tool (GST) including: providing a substrate-load (SL) which includes first-preparedsubstrate (fPS) and second-prepared-substrate (sPS), where fPS includes a first-carbon-source (fCS), a first-sacrificial-diffusion layer (fSDL), and a first-device-level (fDL), where a first-dielectric-layer (fDiLy) is disposed atop fDL, where fSDL is disposed directly atop fDiLy, where fCS is disposed directly atop the fSDL, and where the sPS includes a secondCS, a secondSDL, and a secondDL, where secondDL is disposed atop the secondDL, where the secondSDL is disposed atop secondDiLy, where secondCS is disposed atop secondSDL; providing a GST capable of applying pressure and temperature to SL within a process chamber (PC); placing SL within PC; applying the pressure and the temperature to SL, where sPS is inverted and disposed above fPS, where fCS is in direct contact with secondCS; forming graphene at a first interface between the fDiLy and the fSDL and at a secon

Abstract: A transparent or semi-transparent conducting thin film structure or pattern which facilitates the insertion of dopant atoms, ions, or molecules into layered 2D materials, the film structure including: a planar sheet of layered 2D material, the layered 2D material having at least one layer disposed in a respective plane, an electrically isolative material, where the electrically isolative material is disposed below the layered 2D material, where the layered 2D material has at least one layer, where the layered 2D material is divided into islands of the 2D material, where separation of the islands of 2D material with respect to each other is greater than 0.5 nm and less than 1 meter, and where the islands of 2D material are intercalation doped with at least one dopant, and where the at least one dopant includes intercalation doping agents.

Abstract: A method is described for migration of a deposition material across a diffusion couple deposited on a substrate to a substrate surface including: using a reactor system to facilitate the migration of one or more diffusion materials across a diffusion couple to a substrate by applying a specified pressure to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate, where the specified pressure has a value between 14.5 psi and 125 psi, and applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate, where the heatable top disk is controlled at a temperature between 25° C. and 500° C. and the heatable bottom disk is controlled at a temperature between 25° C. and 500° C., and where graphene is formed on the substrate surface.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom disk includes a first heating mechanism. The heatable bottom disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom disk. A heatable top disk comprising a second heating mechanism. The heatable top disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom disk. While the heatable top disk applies the mechanical pressure, a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value.