Abstract: The present invention relates to a method of forming a metal layer on the surface of a photovoltaic cell by forming a first layer of a first composition on the surface of a silicon substrate and then forming a second layer of a second composition on the first layer, wherein both layers are in electrical contact with each other, the first composition comprises particles comprising or consisting of (i) B, Al, Ga, In, and/or Tl or (ii) P, As, Sb, and/or Bi, the second composition comprises metal particles, and wherein the particles of the first layer have a mean diameter smaller than the mean diameter of the metal particles of the second composition. Further, the present invention also relates to photovoltaic cells and solar modules obtainable using the method of the present invention.

Abstract: In various embodiments, an apparatus for transporting wafers is provided. The apparatus may include a transport belt configured to transport wafers in a transport direction; wherein the transport belt is provided with supports configured to support the wafers to be transported; wherein the supports are provided with at least one bearing element for compensating for relative movements between the transport belt and the wafer.

Abstract: A method for the production of a contact structure of a semiconductor component comprises the masking of at least one side of a semiconductor substrate with a coating and the partial removal thereof in at least one pre-determined region.

Abstract: A method of producing an emitter of a solar cell comprising introducing a first dopant into a solar cell substrate through a surface of the solar cell substrate, forming a diffusion barrier layer on the surface of the solar cell substrate which is impenetrable by a second dopant, and arranging the second dopant on the diffusion barrier layer.

Abstract: A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50%, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are

Abstract: A method of structuring multicrystalline silicon surfaces comprises the provision of a texturing solution, the application of the texturing solution to a surface of a semiconductor substrate to be structured and the heating of the texturing solution to a texturing temperature, wherein the texturing solution comprises at least a portion of phosphoric acid.

Abstract: A method for the production of a contact structure of a solar cell allows p-contacts and n-contacts to be produced simultaneously.

Abstract: In various embodiments, an apparatus for transporting wafers is provided. The apparatus may include a transport belt configured to transport wafers in a transport direction; wherein the transport belt is provided with supports configured to support the wafers to be transported; wherein the supports are provided with at least one bearing element for compensating for relative movements between the transport belt and the wafer.

Abstract: A method for the structuring of multicrystalline silicon substrate surfaces and emitter diffusion into said surfaces comprises the following steps: providing a texturing solution which comprises at least a portion of phosphoric acid, providing a semiconductor substrate with a surface to be structured, coating the surface to be structured with the texturing solution, heating the texturing solution to a heating temperature TT, and heating the texturing solution to a diffusion temperature TD, wherein TD>TT.

Abstract: A method of structuring multicrystalline silicon surfaces comprises the provision of a texturing solution, the application of the texturing solution to a surface of a semiconductor substrate to be structured and the heating of the texturing solution to a texturing temperature, wherein the texturing solution comprises at least a portion of phosphoric acid.