Patents Assigned to Dialog Semoconductor GmbH
  • Output transistor leakage compensation for ultra low-power LDO regulator
    Patent number: 9035630
    Abstract: Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by a temperature dependent sink current generation, which has a nearly zero current consumption increase of about 50 nA at room temperature and starts sink current at temperatures about above 85 to 100 degrees Celsius, which is corresponding to a range of temperature wherein leakage currents come into account.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: May 19, 2015
    Assignee: Dialog Semoconductor GmbH
    Inventor: Rainer Krenzke