Patents Assigned to Diamond Technologies, Inc.
  • Patent number: 8701211
    Abstract: A method of producing sharp tips useful for scanning probe microscopy and related applications is described. The tips are formed by deposition into a mold(s) formed in a sacrificial crystalline semiconductor substrate with an exposed {311} surface which has been etched with a crystallographic etchant to form a 3-sided, trihedral or trigonal pyramidal mold(s) or indentation(s). The resultant tips, when released from the sacrificial mold material or substrate, are typically formed in the shape of a trigonal pyramid or a tetrahedron. Another embodiment involves starting with a {100} surface and the formation of two tips on opposite ends of a wedge at trigonal or trihedral points of the wedge. These tips are less susceptible to the tip wedge effect typical of tips formed using known methods.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: April 15, 2014
    Assignee: Advanced Diamond Technologies, Inc.
    Inventor: Nicolae Moldovan
  • Publication number: 20130213823
    Abstract: A diamond electrode and a diamond microelectrode array for biosensors and electroanalytical applications, such as electrochemical impedance spectroscopy (EIS), are disclosed. The electrode comprises a layer of ultra-smooth conductive nanocrystalline diamond (NCD) having a resistivity of >0.05 ?cm and a surface roughness of <20 nm Ra. Preferably, the diamond layer comprises boron or nitrogen-doped ultrananocrystalline diamond (UNCD) having an average grain size <10 nm and a surface roughness <10 nm Ra. It may be patterned to define a microelectrode array with a plurality of individually addressable electrodes, each having a diameter in the range from 100 nm to 100 ?m. The surface of each microelectrode is hydrogen-terminated before bio-functionalization, i.e. modifying with sensing molecules for detection of a specific biological or chemical target and coating with a blocker for reducing non-specific binding.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 22, 2013
    Applicant: Advanced Diamond Technologies, Inc.
    Inventor: Advanced Diamond Technologies, Inc.
  • Patent number: 8470701
    Abstract: Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: June 25, 2013
    Assignees: Advanced Diamond Technologies, Inc.
    Inventors: John A. Rogers, Tae Ho Kim, Won Mook Choi, Dae Hyeong Kim, Matthew Meitl, Etienne Menard, John Carlisle
  • Publication number: 20120288698
    Abstract: A method of fabrication, a device structure and a submount comprising high thermal conductivity (HTC) diamond on a HTC metal substrate, for thermal dissipation, are disclosed. The surface roughness of the diamond layer is controlled by depositing diamond on a sacrificial substrate, such as a polished silicon wafer, having a specific surface roughness. Following deposition of the diamond layer, an adhesion layer, e.g. comprising a refractory metal, such as tantalum, and at least one layer of HTC metal is provided. The HTC metal substrate is preferably copper or silver, and may be provided by electroforming metal onto a thin sputtered base layer, and optionally bonding another metal layer. The electrically non-conductive diamond layer has a smooth exposed surface, preferably ?10 nm RMS, suitable for patterning of contact metallization and/or bonding to a semiconductor device. Methods are also disclosed for patterning the diamond on metal substrate to facilitate dicing.
    Type: Application
    Filed: March 19, 2012
    Publication date: November 15, 2012
    Applicant: Advanced Diamond Technology, Inc
    Inventors: Nicolaie A. MOLDOVAN, John Arthur Carlisle, Hongjun Zeng
  • Patent number: 8232559
    Abstract: A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: July 31, 2012
    Assignee: Advanced Diamond Technologies, Inc.
    Inventors: Charles West, John Carlisle, James Netzel, Ian Wylie, Neil Kane
  • Patent number: 8227350
    Abstract: A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure.
    Type: Grant
    Filed: January 2, 2009
    Date of Patent: July 24, 2012
    Assignee: Advanced Diamond Technologies, Inc.
    Inventors: Charles West, John Carlisle, James Netzel, Ian Wylie, Neil Kane
  • Patent number: 8197701
    Abstract: Diamond SPM and AFM probes which are durable, particularly for scanning hard surfaces such as diamond surfaces. Interlayers and seeding can be used to improve diamond deposition, and the diamond can be ultrananocrystalline diamond (UNCD). Tip sharpening improves resolution.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: June 12, 2012
    Assignee: Advanced Diamond Technologies, Inc.
    Inventors: John A. Carlisle, Nicolaie Moldovan
  • Patent number: D530642
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: October 24, 2006
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J. Botha
  • Patent number: D546232
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: July 10, 2007
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J. Botha
  • Patent number: D550118
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: September 4, 2007
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J. Botha
  • Patent number: D556624
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: December 4, 2007
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J. Botha
  • Patent number: D564392
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: March 18, 2008
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J. Botha
  • Patent number: D593445
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: June 2, 2009
    Assignee: Diamond Technologies, Inc.
    Inventor: Paul T. Shannon, Sr.
  • Patent number: D643768
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: August 23, 2011
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J Botha
  • Patent number: D643769
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: August 23, 2011
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J Botha
  • Patent number: D643770
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: August 23, 2011
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J Botha
  • Patent number: D656061
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: March 20, 2012
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J. Botha
  • Patent number: D656062
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: March 20, 2012
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J Botha
  • Patent number: D656063
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: March 20, 2012
    Assignee: Embee Diamond Technologies Inc.
    Inventor: Michiel J Botha
  • Patent number: RE44963
    Abstract: A system and method for computerized grading of the cut of a gemstone. The system includes a gemstone model and an illumination model. The gemstone model defines the cut of the gemstone in three dimensions with reference to the facets of the gemstone. The illumination model defines light projected onto the gemstone. The method includes the steps of determining a beam of light refracted into the gemstone from the illumination model for at least one of the facets, tracing reflections of the beam of light within the gemstone, and measuring at least one light beam refracted out of the gemstone model. The measurements of the refracted light are used to evaluate the gemstone.
    Type: Grant
    Filed: December 6, 2010
    Date of Patent: June 24, 2014
    Assignee: Diamond Technologies, Inc.
    Inventor: Paul T. Shannon, Sr.