Abstract: A method for fabricating a cost-effective semiconductor on higher-thermal conductive multilayer (ML) composite wafer, the method comprising the steps of: taking a semiconductor host wafer having a first and a second host wafer surface and preparing the first host wafer surface; growing a transitional layer (TL) having properties of limiting diffusion on the host wafer first surface; depositing a uniform and low-defect additional layer (AL) on the TL; polishing the TL to prepare for bonding; taking a sacrificial semiconductor wafer, having a first and second sacrificial wafer surface, and bonding the first sacrificial wafer surface to the TL at room temperature; removing the sacrificial wafer from the TL and recycling the sacrificial wafer for future use; and grinding and polishing the first host wafer surface; whereby the resultant first host wafer surface becomes a starting surface of the ML composite wafer for device manufacturing.