Patents Assigned to Dichroic Cell S.R.L.
  • Method for producing virtual Ge substrates for III/V-integration on Si(001)
    Patent number: 8882909
    Abstract: Relaxed germanium buffer layers can be grown economically on misoriented silicon wafers by low-energy plasma-enhanced chemical vapor deposition. In conjunction with thermal annealing and/or patterning, the buffer layers can serve as high-quality virtual substrates for the growth of crack-free GaAs layers suitable for high-efficiency solar cells, lasers and field effect transistors.
    Type: Grant
    Filed: May 2, 2005
    Date of Patent: November 11, 2014
    Assignee: Dichroic Cell S.R.L.
    Inventor: Hans Von Kaenel