Abstract: An optoelectronic component arrangement is indicated, which includes a radiation-sensitive detector element having a semiconductor base substrate with one or more doped partial regions and at least one partial layer which is arranged directly in front of the semiconductor base substrate. The detector element is arranged on a transparent carrier substrate, and a filling material is arranged between the carrier substrate and the surface of the detector element facing the carrier substrate. All materials arranged in front of the semiconductor base substrate and the doped partial regions have an essentially similar index of refraction.