Abstract: A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

Abstract: A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing layer. The system includes a process module having a processing chamber and a monomer delivery system configured to admit a gas-phase monomer into the processing chamber for deposition of the low dielectric constant polymer layer, a post-treatment module for annealing the composite polymer dielectric film, and a silane delivery system configured to admit a vapor flow containing a silane precursor into at least one of the process module and the post-treatment module for the formation of the first silane-containing layer and the silane-containing layer.

Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Abstract: Methods and products of Transport co-polymerization (“TCP”) that are useful for preparations of low Dielectric Constant (“?”) thin films are disclosed. Transport co-polymerization (“TCP”) of reactive intermediates that are generated from a first precursor with a general structural formula (Z)m—Ar—(CX?X?Y)n (VI) with a second reactive intermediate that is generated from a cage compound (e.g. Fullerenes, Methylsilsesquioxane, Hydrosilsesquioxane, and Adamantanyl) or a cyclic-compounds (e.g. Cyclo-Siloxanes and 2,2-Paracyclophanes) results in co-polymer films that are useful for making porous low ? (?2.0) thin films. The porous thin films of this invention consist of nano-pores with uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of future ICs using copper as conductor. Preparation methods and stabilization processes for low k co-polymers that consist of sp2C—Z and HC-sp3C?—X bonds are also revealed.

Abstract: A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

Abstract: The present invention pertains to a processing method to produce a porous polymer film that consists of sp2C—X and HC-sp3C?—X bonds (wherein, X?H or F), and exhibits at least a crystal melting temperature, (“Tm”). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (“IC's”). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T1m). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film.

Abstract: New precursors and processes are disclosed for making fluorinated, low dielectric constant ? thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future <0.13 ?m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

Abstract: An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

Abstract: Preparation methods and stabilization processes for low k polymers that consist of sp2C—X and HC-sp3C?—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from ?20° C. to ?50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to ?20° C. to ?50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

Abstract: New precursors and processes to generate fluorinated poly(para-xylylenes) (“PPX”) and their chemically modified films suitable for fabrications of integrated circuits (“ICs”) of <0.15 &mgr;m are disclosed. The films so prepared have low dielectric constants (“∈”) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.

Abstract: New precursors and processes are disclosed for making fluorinated, low dielectric constant ∈ thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future <0.13 &mgr;m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

Abstract: A semiconductor equipment that is useful for the fabrication of integrated circuits (“IC”). More specifically, this invention relates to a “reactive-reactor” for a transport polymerization (“TP”) process module, wherein the process module is useful for the deposition of low dielectric (“&egr;”) thin films in IC manufacture. The reactive-reactor has reactive metal interior surfaces for effective conversion of precursors to intermediates. The resultant reaction products of the precursor and the interior surface material of the reactive-reactor are very stable, and do not cause metallic contamination of the semiconductors. The reactive-reactor of this invention is also equipped with Reactor Re-generating capacity to restore the reactive metal interior surfaces.

Abstract: Poly (para-xylylene) (“PPX”) polymer films are processed under particular conditions in order to maintain their stability for use in integrated circuits. This is primarily achieved by controlling the substrate temperature, feed rate of the polymer precursors, and the environmental conditions. The resulting films are stable at high temperatures and compatible with other film layers.

Abstract: A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“∈”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.

Abstract: A multi-stage transport polymerization (“TP”) reactor useful for making a thin film for the fabrication of integrated circuits. One TP reactor has two distinct heating zones that facilitate the cracking of specific precursor materials. The multi-stage reactor comprises a first low temperature heating zone that heats incoming precursor materials to a temperature that is lower than the “cracking” temperature of the precursor. The second heating zone is maintained at a temperature useful for breaking the chemical bonds of a desired leaving groups in the selected precursor. Specialized heating bodies, which transfer heat to the precursor material in the low and high temperature zones, are used as elements of the invention that can simultaneously decrease the total volume and increase the inside surface area of the TP reactor. Chemistries of precursors used in the multi-stage reactor are also provided.

Abstract: Preparation methods and stabilization processes for low k polymers that consist of sp2C—X and HC-sp3C&agr;—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20° C. to −50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20° C. to −50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum.

Abstract: An improved reactor to facilitate new precursor chemistries and transport polymerization processes that are useful for preparations of low &egr; (dielectric constant) films. An improved TP Reactor that consists of UV source and a fractionation device for chemicals is provided to generate useful reactive intermediates from precursors. The reactor is useful for the deposition system.

Abstract: New precursors and processes are provided to generate fluorinated low dielectric constant, &egr; films that have higher dimensional stability and more rigid than fluorinated Poly (Para-Xylylenes). The low &egr; films are prepared primarily from polymerization of precursors consisting of both benzocyclobutane and unsaturated carbon-carbon groups such as vinyl (C═C) and ethylenic groups. The low &egr; polymers consists primarily of SP2C—F, hyperconjugated Sp3C&agr;—F type or/and Sp3Si&agr;—F fluorine. The low &egr; (<2.4) films are useful for fabrications of future<0.18 &mgr;m ICs. Using low &egr; films prepared according to this invention, the integrity of dielectric, Cu and its barrier metals such as Ta can be kept intact; therefore reliability of these ICs can be assured.

Abstract: New precursors and processes are disclosed for making fluorinated, low dielectric constant &egr; thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future <0.13 &mgr;m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

Abstract: The present invention pertains to a processing method to produce a porous polymer film that consists of sp2C—X and HC-sp3C&agr;—X bonds (wherein, X═H or F), and exhibits at least a crystal melting temperature, (“Tm”). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (“IC's”). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T1m). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film.