Abstract: In one aspect, a system includes a conventional, film-based X-ray machine and a digital imaging assembly. The X-ray machine includes an X-ray source and a bracket assembly configured to hold X-ray film. The digital imaging assembly is configured to be mounted on the bracket assembly of the X-ray machine. The digital imaging assembly includes a scintillation screen and a digital image sensor. The digital image sensor is coupled with one or more processors that is configured to receive user input that selects a mode of operation from between a still image capture mode and a video capture mode, receive digital signals from the digital image sensor, process the digital signals to generate digital X-ray image data in accordance with the selected mode of operation, and present the generated digital X-ray image data on a display device.

Abstract: In one aspect, a system includes a conventional, film-based X-ray machine and a digital imaging assembly. The X-ray machine includes an X-ray source and a bracket assembly configured to hold X-ray film. The digital imaging assembly is configured to be mounted on the bracket assembly of the X-ray machine. The digital imaging assembly includes a scintillation screen and a digital image sensor. The digital image sensor is coupled with one or more processors that is configured to receive user input that selects a mode of operation from between a still image capture mode and a video capture mode, receive digital signals from the digital image sensor, process the digital signals to generate digital X-ray image data in accordance with the selected mode of operation, and present the generated digital X-ray image data on a display device.

Abstract: An improved semiconductor device and method which includes a zener diode and RC network combination that share common semiconductor mask steps during the fabrication process. A common N+ layer serves to provide both the separate N+ cathode regions of the zener diode and the separate bottom electrode N+ region of the capacitor. A common metal layer serves to provide separate electrical contacts to the N+ cathode regions of the zener diode and also provides a separate top metal electrode for the capacitor. The capacitor dielectric is comprised of silicon nitride. A silicon dioxide/silicon nitride insulation layer is formed between the top metal electrode of the capacitor and a resistive layer typically made from tantalum nitride.

Abstract: An improved semiconductor device is disclosed for protecting active and passive devices against electrostatic discharge (ESD). The device is an improved semiconductor diode having anode, injector and ohmic contact regions located within a cathode region. The improved semiconductor diode allows for ESD higher currents without damage to active or passive devices including, for example, resistor-capacitor networks or resistor-capacitor-inductor networks incorporating the improved semiconductor diode.

Abstract: An improved RC network integrated circuit semiconductor device is disclosed which incorporates an improved method for fabrication. The new device and method includes the use of a tantalum nitride layer as the resistive material for the resistor and a protective metal layer formed between the resistive layer and a metal interconnect layer. The capacitor uses a metal electrode as one plate of the capacitor and a heavily doped semiconductor region as the other plate of the capacitor and separated from the one plate of the capacitor by a silicon nitride insulation layer.