Abstract: A current sensor includes: four first uniaxial TMR chips and at least two second uniaxial TMR chips, each first uniaxial TMR chip and each second uniaxial TMR chip being located on the same virtual ring, wherein magnetic sensitive directions of the four first uniaxial TMR chips are perpendicular to a radius of the virtual ring, magnetic sensitive directions of two adjacent first uniaxial TMR chips are perpendicular to each other, magnetic sensitive directions of the two second uniaxial TMR chips are parallel to the radius of the virtual ring and opposite to each other, and the two second uniaxial TMR chips respectively have the same positions as two first uniaxial TMR chips; each first uniaxial TMR chip and each second uniaxial TMR chip are configured to collect a magnetic induction intensity, the magnetic induction intensity is configured to calculate a target current value of a to-be-measured wire.

Abstract: A wire voltage measurement method includes: acquiring a first corresponding relationship of an electric field intensity of a to-be-measured wire, a voltage of the to-be-measured wire, and a perpendicular distance between an electric field sensor and the to-be-measured wire; measuring at least four initial electric field intensities in an electric field sensitive direction through the at least four electric field sensors, and acquiring distances among the four electric field sensors along the straight line; calculating a second corresponding relationship of the voltage of the to-be-measured wire and an external interference electric field intensity in the electric field sensitive direction according to the four initial electric field intensities, the distances among the four electric field sensors along the straight line, the first corresponding relationship, and a spatial position relationship of the at least four electric field sensors; calculating the voltage of the to-be-measured wire according to the seco