Abstract: A multicomponent amorphous silicon film suitable for a solar cell is produced at a higher deposition rate by a novel process comprising using jointly a sputtering method and a plasma CVD method within a pressure range of not lower than a pressure at which the maximum film formation rate is given in the sputtering method.
Type:
Grant
Filed:
March 29, 1984
Date of Patent:
January 29, 1985
Assignee:
Director General of Agency of Industrial Science and Technology Michio Kawata