Abstract: A method and system for fabricating microcircuits occupying large areas on substrates capable of withstanding high semiconductor processing temperatures and then transferring the circuits onto large substrates incapable of withstanding the high processing temperatures. The method and system is particularly suitable for fabricating large area displays.
Abstract: A field emission display which includes thin film resistors disposed between the electron-emitting elements of a cathode and a conductive support which provides electrical connection to said electron-emitting element through said thin film.
Abstract: A flat panel display that includes a ceramic substrate, side walls and a transparent window forming an evacuated envelope is described. The substrate serves to support anode pads or a semiconductor chip having anode pads within the envelope. Electrical leads are embedded in the ceramic substrate and serve to provide electrical connection between the interior and exterior of the envelope.
Abstract: An improved vacuum fluorescence display (VFD) that is less expensive to produce and more rugged than currently available VFDs. The display includes metal side walls and fluorescent material carried on one or more silicon wafers. A ceramic, layerable insulating material is employed as the substrate on which the wafer or wafers are mounted. In another embodiment of the current invention, a chemical getter is incorporated into a recess formed in the ceramic substrate. The getter is positioned underneath the back side of the phosphor screen so as to significantly reduce contamination of the screen by material sputtered off of the surface of the getter.
Type:
Grant
Filed:
September 14, 2001
Date of Patent:
February 25, 2003
Assignee:
Display Research Laboratories, Inc.
Inventors:
Kazuhiko Kasano, Duane A. Haven, W. Edward Naugler, Jr.
Abstract: A flat panel display is described. The flat panel display includes a matrix of light-emitting diodes which are driven by thin film field effect transistor circuits in which the channel electrodes of the field effect transistors are cadmium selenide or cadmium telluride. The cadmium selenide or cadmium telluride contains fluoride ions to enhance the mobility. A non-oxygenated layer is applied to the channel electrodes.