Abstract: There is provided a semiconductor device for detecting a change in ion concentration of a sample and method of using same. The device can have a plurality of Field Effect Transistors (FETs) coupled to a common floating gate and an ion sensing layer exposed to the sample and coupled to the floating gate. There may be other input voltages coupled to the floating gate.

Abstract: A device for sensing a property of a fluid comprising a first substrate having formed thereon a sensor configured in use to come into contact with a fluid in order to sense a property of the fluid, and a wireless transmitter for transmitting data over a wireless data link and a second substrate having formed thereon a wireless receiver for receiving data transmitted over said wireless link by said wireless transmitter. The first substrate is fixed to or within said second substrate. Additionally or alternatively, the device comprises a first substrate defining one or more microfluidic structures for receiving a fluid to be sensed and a second substrate comprising or having attached thereto a multiplicity of fluid sensors, the number of sensors being greater than the number of microfluidic structures.

Abstract: A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localized fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localized fluctuations of ionic charge indicating events occurring during a chemical reaction.

Abstract: There is provided a semiconductor device for detecting a change in ion concentration of a sample and method of using same. The device comprises a plurality of Field Effect Transistors (FETs) coupled to a common floating gate and an ion sensing layer exposed to the sample and coupled to the floating gate. There may be other input voltages coupled to the floating gate.

Abstract: An apparatus with a transducer having a first output signal and arranged to receive an electrical input. The transducer switches the first output signal between an ON and OFF state. The apparatus has a chemical sensing surface coupled to the transducer arranged to receive a chemical input. A signal generator oscillates one or more of said inputs to vary the switching point of the transducer. The oscillating input may be the chemical input and/or the electrical input. The output signal may be a pulse whose period ON or OFF is determined by the oscillating input modulated by the chemical input.

Abstract: A device for sensing a property of a fluid comprising a first substrate having formed thereon a sensor configured in use to come into contact with a fluid in order to sense a property of the fluid, and a wireless transmitter for transmitting data over a wireless data link and a second substrate having formed thereon a wireless receiver for receiving data transmitted over said wireless link by said wireless transmitter. The first substrate is fixed to or within said second substrate. Additionally or alternatively, the device comprises a first substrate defining one or more microfluidic structures for receiving a fluid to be sensed and a second substrate comprising or having attached thereto a multiplicity of fluid sensors, the number of sensors being greater than the number of microfluidic structures.

Abstract: Provided is a method of identifying an unknown nucleic acid comprising the steps of combining the unknown polynucleic acid with known nucleic acid reagents in a reaction chamber; producing a first quantity of protons from a polymerisation reaction when bases of one or more of the unknown nucleic acids are complementary to the bases of one or more known nucleic acids comprised within the known reagents; producing a second quantity of protons from a hydrolysis reaction of by-products of the polymerisation reaction with one or more enzymes; monitoring an electrical output signal derived from an ISFET exposed to the reaction chamber; and correlating changes in an output signal with said reactions between the unknown polynucleic acid and said known reagents to thereby identify the unknown nucleic acid.

Abstract: A device comprising an electrostatic discharge protection structure (8), an ion sensitive field effect transistor (ISFET) having a floating gate (5,6,7,9,10), and a sensing layer (12) located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process.

Abstract: A sensor system comprising a substrate and integrated onto the substrate an array (7) of sensor elements (1), each sensor element comprising one or more inductors (3), one or more electrochemical sensors (4), and one or more optical sensors (2). The system further comprising a controller configured in use to separately address each of the sensor elements (1) to drive the respective inductors and receive outputs of the respective sensors.

Abstract: A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localised fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localised fluctuations of ionic charge indicating events occurring during a chemical reaction.

Abstract: A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localized fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localized fluctuations of ionic charge indicating events occurring during a chemical reaction.

Abstract: A reference circuit comprising first and second field effect transistors connected to form a first current mirror, and third and fourth field effect transistors connected to form a second current mirror, wherein a property of the first transistor is mismatched relative to the second transistor such that the threshold voltage of the first transistor is significantly higher than the threshold voltage of the second transistor, and the drain current versus gate-source voltage responses of the first and second transistors have substantially different gradients for current levels at which the reference circuit is operated.