Abstract: A method of manufacturing a sacrificial layer may include providing a first compound including an amine compound including at least one secondary amine and a second compound including an isocyanate compound, and forming a sacrificial layer including polyurea through a polymerization reaction of the first compound and the second compound.

Abstract: Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

Abstract: Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.

Abstract: Provided are an indium compound, a method of producing the same, a composition for depositing an indium-containing thin film including the same, and a method of producing an indium-containing thin film using the same. The provided indium compound has excellent thermal stability, high volatility, and improved vapor pressure, thereby producing an indium-containing thin film having a uniform thickness with an improved deposition speed by adopting the indium compound.

Abstract: Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Abstract: Provided are a composition for depositing a molybdenum-containing thin film, a method for manufacturing a molybdenum-containing thin film, and a molybdenum-containing thin film using the same, the composition for depositing a molybdenum-containing thin film comprising a precursor for thin film deposition comprising a monovalent molybdenum-based compound, a divalent molybdenum-based compound, a trivalent molybdenum-based compound, a tetravalent molybdenum-based compound, a pentavalent molybdenum-based compound, a hexavalent molybdenum-based compound, a zero-valent molybdenum-based compound that binds to at least two organic ligands, or any combination thereof, and a reactant comprising a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof, wherein a molar concentration of the reactant may be about 200 times or less than a molar concentration of the precursor for thin film deposition.

Abstract: Silicon compounds may be represented by the following formula: Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.

Abstract: A thin-film forming composition includes an aluminum compound represented by General Formula (1). In General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1): R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,??Chemical Formula (1) wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p?1, m+n?3, and p+q?3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

Abstract: A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):

Abstract: Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.

Abstract: Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1. In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Abstract: Silicon compounds may be represented by the following formula: Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Abstract: Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Abstract: Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.