Patents Assigned to DNS Electronic Materials, Inc.
  • Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
    Patent number: 4868133
    Abstract: The concentration of internal gettering sites within a semiconductor wafer is controlled by two-step thermal processing. In a concentration reduction phase, the wafer is rapidly heated to an elevated temperature in the range from about 900.degree. to 1350.degree. C., resulting in the partial or total dissolution of precipitable impurities within the wafer. In a concentration enhancement step, the wafers are subjected to a relatively low temperature anneal process where the density of potential internal gettering sites is increased. By properly controlling the processing temperatures and treatment times, the two steps may be performed in either order to obtain wafers having internal gettering site concentrations within a desired range.
    Type: Grant
    Filed: March 16, 1989
    Date of Patent: September 19, 1989
    Assignee: DNS Electronic Materials, Inc.
    Inventor: Walter Huber
  • Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
    Patent number: 4851358
    Abstract: The concentration of internal gettering sites within a semiconductor wafer is controlled by two-step thermal processing. In a concentration reduction phase, the wafer is rapidly heated to an elevated temperature in the range from about 900.degree. to 1350.degree. C., resulting in the partial or total dissolution of precipitable impurities within the wafer. In a concentration enhancement step, the wafers are subjected to a relatively low temperature anneal process where the density of potential internal gettering sites is increased. By properly controlling the processing temperatures and treatment times, the two steps may be performed in either order to obtain wafers having internal gettering site concentrations within a desired range.
    Type: Grant
    Filed: February 11, 1988
    Date of Patent: July 25, 1989
    Assignee: DNS Electronic Materials, Inc.
    Inventor: Walter Huber