Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A digital time delay circuit is provided in which fabrication process variations and temperature effects on the switching threshold level of digital circuits utilized in the timing delay circuits are substantially eliminated.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A method for providing accurate temperature sensing of a substrate utilizing the PN junction of a transistor formed on the substrate is described.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: In accordance with the principles of the invention, an integrated circuit comprises a substrate having a first FET formed on the substrate. The first FET has a first terminal coupleable to a load, a second terminal and a control terminal. The second terminal is connected to the substrate. The substrate comprises a parasitic body diode coupled between the first terminal and the substrate. The body diode is disposed such that it becomes conductive when a reverse voltage across the FET first terminal and the substrate is at least a first diode forward voltage. A voltage detector is formed on the substrate. The voltage detector has a first input coupled to the FET first terminal, a second input coupled to the substrate, and an output coupled to the FET control terminal. The voltage detector is responsive to a reverse voltage level at the FET first terminal that is less than the first diode forward voltage to turn the FET on for the duration of a reverse voltage having at least said reverse voltage level.

Abstract: A voltage bandgap circuit comprises a first transistor and a second transistor connected in a voltage bandgap circuit arrangement, the area of the first transistor is selected to be a predetermined multiple of the area of the second transistor; a differential input amplifier has a first input coupled to the first transistor and a second input coupled to the second transistor; the amplifier has its output coupled to an output node. A first trimmable resistance network is coupled to say the bandgap circuit and is trimmed to adjust the output voltage of the bandgap circuit based upon a single temperature voltage measurement made across two of the terminals of each transistor.

Abstract: In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.