Abstract: A self-protected divider bridge in an integrated circuit comprising a P.sup.- substrate, a N.sup.- well, a P region forming a resistor, diffused in said well. A first and a second outmost contact and an intermediate contact are formed on the diffused region. A pad connected to the first contact receives an external voltage higher than the supply voltage of the integrated circuit. The reference potential of the integrated circuit is connected to the second contact and the substrate. A third contact formed on the well close to the first contact is connected to the first contact, and a fourth contact formed on the well close to the second contact is connected to the second contact.