Abstract: Method for patterning a photoresist film in lithographic process including the steps of: coating the photoresist film on a substrate provided with an under layer; exposing the substrate; firstly developing the photoresist film; exposing a whole surface of the substrate; and secondly developing the photoresist film. The present method has effects on improving an accuracy of formation of pattern and preventing from scum, photoresist residues, and so on, with relatively low cost and short process time.

Abstract: A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film of the capacitor includes the steps of forming a lower metal film, a lower nitride film, an upper metal film, and an upper nitride film on a substrate having a predetermined device formed thereon, and then forming a pattern thereover; etching the upper nitride film with CHF3, Ar and Cl2 using the pattern; over etching the upper metal film more than 50% with CHF3, Ar and N2 using the pattern; etching the upper metal film with CHF3, Ar and N2 using the pattern; and etching the lower nitride film with CHF3 and Ar using the pattern.