Patents Assigned to Dongbu HiTeck Co., Ltd.
  • Patent number: 7745251
    Abstract: A method of manufacturing a complimentary metal oxide semiconductor (CMOS) image sensor. The method includes a step of performing a silicide process relative to a plug for transferring electrons generated from a photodiode. The silicide of the plug blocks light irradiated through the plug, so that the performance of the image sensor may be optimized.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: June 29, 2010
    Assignee: Dongbu HiTeck Co., Ltd.
    Inventor: Jeong-Su Park
  • Publication number: 20100032768
    Abstract: A transistor of an image sensor and a method for manufacturing the same include simultaneously forming a device isolation layer at a boundary between a first conductive transistor region having a second conductive well formed therein and a second conductive transistor region having a first conductive well formed therein, and a trench dielectric layer at a junction transistor region having no conductive well formed therein, and then simultaneously forming a first gate pattern at the first conductive transistor region, a second gate pattern at the second conductive transistor region and a laminated layer at the junction transistor region, and then forming a bipolar junction in the laminated layer by sequentially implanting a first conductive dopant and a second conductive dopant into the laminated layer.
    Type: Application
    Filed: August 6, 2009
    Publication date: February 11, 2010
    Applicant: Dongbu HiTeck Co., Ltd.
    Inventor: Hyung-Jin Park