Abstract: Embodiments relate to an apparatus for coating a photoresist layer and a photolithography method using the apparatus. In embodiments, the apparatus may include a rotatable wafer support for supporting a wafer to be coated with a photoresist layer, a beam nozzle for performing WEE (Wafer Edge Exposure) with respect to a photoresist layer at an edge of the wafer on the wafer support, and a spray nozzle for spraying an alkali solution onto an edge of the wafer exposed through the beam nozzle.
Abstract: A method of forming a semiconductor device that includes heating a wafer on which an Al—Cu sputtering thin film is formed before patterning the Al—Cu sputtering thin film. The heating is performed at a temperature no less than a solid solution temperature of copper or at a temperature between 300° C. and 600° C. The process temperature in heating the process wafer is not higher than the flow temperature of aluminum or is the temperature at which a reflow process can be performed.