Abstract: Provided is a film touch sensor comprising a separation layer; a protective layer formed on the separation layer; an electrode pattern layer formed on the protective layer; and an insulation layer formed on the electrode pattern layer, wherein the protective layer is a cured layer of a protective layer forming composition comprising a cyclic olefin polymer having a protonic polar group and a curing agent comprising a polyamide-imide resin in a specific mixing ratio. The film touch sensor has improved mechanical properties of the protective layer, so that the occurrence of cracks can be suppressed during a manufacturing process or transfer.

Abstract: A touch sensor according to an embodiment of the present invention includes a base layer including a first region and a second region, a touch sensing electrode layer disposed on the first region of the base layer, the touch sensing electrode layer including a plurality of touch sensing unit electrodes having openings formed therein, and a fingerprint sensing electrode layer including a plurality of fingerprint sensing unit electrodes disposed on the second region of the base layer. A space having the same shape as that of the openings is formed between neighboring fingerprint sensing unit electrodes of the plurality of fingerprint sensing unit electrodes.

Abstract: An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and the remaining amount of water.

Abstract: The present invention provides an etchant composition comprising A) high strength potassium monopersulfate providing from about 0.025% to about 0.8% by weight of active oxygen; B) from about 0.01% to about 30% by weight of the composition of B1) an organic acid, alkali metal salt of an organic acid, ammonium salt of an organic acid, or a homopolymer of an organic acid, or B2) a halogen or nitrate salt of phosphonium, tetrazolium, or benzolium, or B3) a mixture of component B1) and B2); and C) from about 0% to about 97.49% by weight of the composition of water; and a method of etching a substrate using said composition.

Abstract: Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.