Abstract: An irradiation apparatus configured to be coupled to an irradiation chamber containing a material to be irradiated, comprising: a support structure; one or more radiation sources coupled to the support structure; and a heat exchange mechanism thermally coupled to the one or more radiation sources. The heat exchange mechanism comprises one or more of a thermoelectric cooling device, a vapor chamber, a heatsink, a heat dissipation structure, a fan, and a cooling coating. The one or more radiation sources comprise one or more UV radiation sources, one or more UV-C radiation sources, one or more visible radiation sources, or a combination thereof. Optionally, the one or more radiation sources comprise a plurality of radiation sources arranged in an array. Optionally, the one or more radiation sources deliver a combination of wavelengths to the material to be irradiated.

Abstract: Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.

Abstract: Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.