Abstract: Titanium aluminide (TiAl) rotor shaft assembly (10) of a type used in a turbocharger has a TiAl rotor (20) with an axially protruded portion (40) that is fixedly joined to a recessed portion (50) of a metal shaft (30) by the synergistic combination of an interference fit, such as a heat shrinkage fit, further supported by a brazed joint (60) in which a thin layer of a brazing material (110) is interposed between the surface of the protruded portion (120) and the recessed surface (130). Optionally, one or both of the jointed surfaces have braze channels (90) to facilitate braze flow within the joint. Methods for producing the rotor shaft assembly (10) and a turbocharger having the rotor shaft assembly (10) are provided.

Abstract: A casing (32) included in a baby carriage folding mechanism is mounted on a substantially middle part of the handle of a folding baby carriage. Hinged joints (33) each having a stationary member (34) and a movable member (35) are connected to the opposite ends of the casing (32), and pipes (18) forming the handle are connected to the hinged joints (33), respectively. The pipes (18) are connected to the movable members (35) of the joints (33). Actuating members (38a and 38b) capable of being operated by an operating mechanism included in the casing (32) are connected to the movable members (35) of the hinged joints (33). The actuating members (38a and 38b) turn the movable members (35) relative to the corresponding stationary members (34) for folding and developing the folding baby carriage.

Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

Abstract: Systems and methods for milling paving material. A self-powered milling system includes a cutting head to mill the paving material. The cutting head is powered by a milling system motor that speeds up production and enables the milling of very thick asphalt in a single pass. A milling system carriage follows the contour of the ground, provides stability during the milling process, is selectively adjusted to provide cuts at various angles, and enables precise edge milling. A breaker bar holds the paving material down as it tries to lift up during the milling process, and is employed to assist in the breaking up of the milled aggregate.

Abstract: From a latch circuit (12) composed of five stages of latch circuits each storing data signals corresponding to one line, data signals to be fed to a drive circuit (16) to light the corresponding light-emitting sections are selected by a select circuit (15) selects according to correction data, consisting of 9 bits for each light-emitting section, stored in a Y position correction data storage circuit (13). This permits adjustment of the timing with which the individual light-emitting sections are lit and thereby helps achieve printing with satisfactory linearity.

Abstract: A general chiral column with a multipleproline-based chiral stationary phase. Embodiments include chiral stationary phases of the following formula: wherein n is any integer of 2 or greater, and analogs and isomers thereof.

Abstract: A filter assembly particularly useful in electronically enhanced air cleaning systems including a fibrous filter media. A conductive electrode is affixed to the fibrous filter media, so that the conductive electrode makes physical contact to the fibrous filter media in a plurality of substantially planar locations. The conductive electrode is coupled to a potential that enables neutralizing charge that accumulates on the filter media during operation to be removed thereby maintaining high efficiency.

Abstract: A method and apparatus for drying book and similar paper-based materials in wet or frozen state, in which the material dried is exposed to microwave irradiation with frequency from 500 MHz to 10 GHz and in which the book or similar paper-based materials is lined with ceramic slabs before the drying. In this arrangement the materials are subsequently exposed to microwaves under atmospheric or reduced pressure. An apparatus for carrying out the method includes microwave drying oven modified for a batch or continuous operation, which includes adjustable ceramic slabs capable to absorb both moisture and microwaves.

Abstract: A method of heat treatment of glass materials and natural materials specifically of volcanic origin according to which the treated material is exposed to microwave radiation at a frequency range from 1 MHz to 10 GHz and temperature range from the ambient temperature to 1800° C. in a batch or continuous process. The glass or natural material subjected to a melting and/or refining process contains an inert additive elected from the group comprising carbides, nitrides or borides in an amount from 1 to 100 g preferably 5 to 50 g per 1 kg of the glass or natural material. The apparatus consists substantially of a microwave furnace comprising an outer shell (8.2) provided with a cover (10) and an inner shell (8.1) and at least one micro wave generator (1.1, 1.2, 1.3, 1.4) with double emission and total power from 0.1 to 1 kW per 1 kg of the treated material.

Abstract: A method for producing a plate heat exchanger with multiple plates made of a solderable material. The plated define circuits for fluid circulation and are assembled together by soldering. The soldering is done after a soldering material is applied to the regions to be soldered. The soldering material is deposited on the plates with an electrolytic solution.

Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

Abstract: The subject-matter of the invention is a process for the preparation of o-(p-tolyl)benzonitrile, characterized in that an o-halobenzonitrile is treated with a p-tolylmagnesium halide in the presence of a manganous salt and of a cocatalyst comprising a transition metal.

Abstract: A device is described for testing the force to shear a deposit of solder or gold from a substrate, these deposits having a diameter in the range 50-100 &mgr;m and being for the bonding of electrical conductors. A shear tool has a semi-cylindrical cavity which closely approximates to the mean diameter of a range of substrates. This tool is adapted to re-shape substrates for a better fit, re-shaping occurring over 30% or less of the circumference of a deposit, and to a depth of 10% or less of the diameter of the substrate.

Abstract: The seat portion of a rearward facing child safety seat has static rear part and a movable front part which is movable between a deployed position in which its upper surface is contiguous with that of the rear part and a stowed position leaving an opening in front of the rear part for receiving the legs of an older child occupying the child seat with his knees bent and his feet positioned below the level of the static rear part.