Abstract: Described is an optoelectronic device, comprising: a silicon material including a first doped region and a second doped region forming a high-field junction region; a reflective diffractive region coupled to and separated from the silicon material with a dielectric layer and positioned to interact with electromagnetic radiation; and a backside illuminated structure.
Type:
Application
Filed:
June 18, 2019
Publication date:
August 26, 2021
Applicant:
DOT9 INC
Inventors:
Drake Andrew MILLER, Ren EARL, Jeff Allan MCKEE