Abstract: A method of growing a silicon carbide single crystal on a silicon carbide seed crystal in an inert gas environment includes the step of raising the seed crystal temperature to a growth temperature Tseed and raising the temperature of source material to a growth temperature Tsource that is lower than Tseed to define a thermal gradient therebetween. The process also requires maintaining constant seed temperature and constant source temperature throughout substantially the entire growth period of the single crystal. The growth period begins when the seed crystal and source material reach Tseed and Tsource. Another step requires changing only the pressure of the inert gas during the growth period to control the growth rate of the crystal rather than changing any temperatures to control the growth rate once growth of the single crystal has started.