Abstract: A ferrite powder for bonded magnets capable of producing a ferrite bonded magnet having high BHmax, and excellent in fluidity when converted to a compound, and having a high p-iHc value, and a method for producing the same, and a ferrite bonded magnet using the ferrite powder for bonded magnets, wherein an average particle size of particles obtained by a dry laser diffraction measurement is 5 ?m or less; a specific surface area is 1.90 m2/g or more and less than 2.80 m2/g; a compression density is 3.50 g/cm3 or more and less than 3.78 g/cm3, and a compressed molding has a coercive force of 2300 Oe or more and less than 2800 Oe.

Abstract: The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.

Abstract: A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.