Abstract: In magnetic parts such as inductors and antennas using magnetic metal powder, the complex component of a magnetic permeability, which represents a loss in a GHz band, has been high. A magnetic part formed from a soft magnetic metal powder including iron as a main component can reduce a loss factor in a kHz to GHz band. The soft magnetic metal powder has an average particle diameter of 100 nm or less, an axial ratio (=major axis length/minor axis length) of 1.5 or more, a coercive force (Hc) of 39.8 to 198.9 kA/m (500 to 2500 Oe), and a saturation magnetization of 100 Am2/kg or more.

Abstract: A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 ?m nor more than 10 ?m on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.

Abstract: An epitaxial substrate including a single-crystal base material and an upper layer of a group III nitride crystal film which is epitaxially formed on a main surface of the base material undergoes heating treatment in a nitrogen atmosphere at 1950° C. or higher for one minute. The result showed that, while a ?-ALON layer was formed only at the interface between the base material and the upper layer, the dislocation density in the group III nitride crystal was reduced to one tenth or less of the dislocation density before the heating treatment. The result also showed that the surface of the epitaxial substrate after the heating treatment had a reduced number of pits, which confirmed that high-temperature and short-time heating treatment was effective at improving the crystal quality and surface flatness of the group III nitride crystal.