Abstract: The carrier core particles 11 for electrophotographic developer contain lithium as a core composition. When the carrier core particles 11 are immersed in pure water at a weight ratio of 1 part core particles 11 to 10 parts pure water and shaken, the amount of lithium that leaches out to the pure water is 0.10 ppm or lower.

Abstract: The carrier core particles for electrophotographic developer have a volume size distribution with a median particle size ranging from 30 ?m to 40 ?m, the ratio of the carrier core particles having a diameter of 22 ?m or lower in the volume size distribution is from 1.0% to 2.0%, the ratio of the carrier core particles having a diameter of 22 ?m or lower in a number size distribution is 10% or lower, and the magnetization of the carrier core particles in an external magnetic field of 1000 Oe is from 50 emu/g to 75 emu/g.

Abstract: There is provided a bonding material capable of forming a bonding body under an inert gas atmosphere such as a nitrogen atmosphere, and capable of exhibiting a bonding strength that endures a practical use even if not a heat treatment is applied thereto at a high temperature, which is the bonding material containing silver nanoparticles coated with a fatty acid having a carbon number of 8 or less and having an average primary particle size of 1 nm or more and 200 nm or less, and silver particles having an average particle size of 0.5 ?m or more and 10 ?m or less, and an organic material having two or more carboxyl groups.

Abstract: To provide a carrier for electrophotographic developer, capable of realizing a high image quality and full colorization and reducing carrier scattering, and a manufacturing method of the same, and an electrophotographic developer containing the carrier. A carrier core material for electrophotographic developer, with a general formula expressed by MgxMn(1-x)FeyO4 (where 0<x<1, and 1.6?y?2.4), wherein a half-value width B of a peak having a maximum intensity in a powder XRD pattern satisfies B?0.180 (degree), is manufactured and from this carrier core material for electrophotographic developer, the carrier for electrophotographic developer and the electrophotographic developer are manufactured.

Abstract: A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 ?m. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.

Abstract: An oxygen absorber for blending in a resin, comprising a mixed powder containing an iron powder, a metal halide and an alkaline substance, and having a half-peak width on a plane (110) of 0.20°/2? (Co—K?) or less as measured by a powder X-ray diffraction method, a specific surface area of 0.5 m2/g or more, and an average particle size of 1 to 40 ?m. The oxygen absorber effectively suppresses the generation of hydrogen, features excellent safety, exhibits excellent oxygen-absorbing capability and offers an advantage of high productivity due to the suppressed occurrence of coarse particles in the step of producing the oxygen absorber.

Abstract: To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlxGa1-xN layer (0?x<1) on the buffer side, and an AlzGa1-zN adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first AlxGa1-xN layer (x?0.05?z?x+0.05, 0?z<1) is provided between the buffer and the functional laminate.

Abstract: A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.

Abstract: It is important that the metal particles used in a conductive paste used for wiring have the characteristic of being easily dispersed in a polar solvent in combination with another material such as a resin used in a paste. Provided is a metal particle powder which exhibits a pH value of 6 or less when 0.5 g of the metal particles to be evaluated are added to 100 mL of a potassium hydroxide solution with a pH of 11, and then an aqueous nitric acid solution in an amount in which pH becomes 5 by adding 0.10 mol/L nitric acid to 100 mL of a potassium hydroxide solution and 10 mL of ethyl alcohol (blank solution) with a pH of 11 is added.

Abstract: The method for manufacturing a silver particle-containing composition according to the invention is directed to a method for manufacturing a silver particle-containing composition coated with a fatty acid and includes a step (A) of preparing silver particles coated with a first fatty acid (a) with 3 to 7 carbon atoms, a second fatty acid (b) with 2 to 20 carbon atoms, and a solvent in which the first and second fatty acids can disperse, respectively, a step (B) of adding the silver particles coated with the first fatty acid (a) and the second fatty acid (b) into the solvent, and a step (C) of substituting the second fatty acid (b) for the first fatty acid (a) coating the silver particles after the addition step.

Abstract: A production method capable of producing ITO particles without using a solvent with a high boiling point as a solvent used in the producing step by a simple treatment method without through a heating process in an atmosphere which disadvantageously causes sintering among the ITO particles to coarsen the ITO particles. An ITO powder suitable for a coating material for a transparent electroconductive material, being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to thereby manufacture a mixture of a precursor containing indium and tin, and the organic solvent; and a second step of applying heat treatment to the mixture of the precursor containing indium and tin, and the organic solvent in a pressurizing vessel at 200° C. or more and 300° C. or less, to generate ITO particles.

Abstract: A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate (2) consists of a plurality of layers (5a) of a solder free from lead, which are different in its phase from one another. They are constituted by a layer of a phase that is completely melted, and a layer of a phase that is not completely melted at a temperature not less than a eutectic temperature of the solder. The solder layer (5) can be applied to a device joining substrate (1) comprising an electrode layer (4) formed on the base substrate (2) and the solder layer (5) formed on the electrode layer.

Abstract: ITO particles are provided, which are small in variations of particle diameters and used for an ITO coating material capable of forming a transparent conductive film having high transparency and low haze value. Also, ITO coating material is provided, containing such ITO particles, and a transparent conductive film containing such ITO particles. Further, ITO powders are provided, wherein 90% or more of ITO particles constituting the ITO powders have a primary particle diameter of 20 nm or less.

Abstract: A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of AlxGa1-xN (0?x?0.05) on a second surface of the III nitride semiconductor laminate. The second surface is opposite to a first surface on the light extraction side.

Abstract: A carrier core particle for an electrophotographic developer including a core composition expressed by a general formula: (MnxMgyCaz) FeWO4+V (x+y+z+w=3, ?0.003<v) as a main ingredient, wherein 0.05?y?0.35 and 0.005?z?0.024.

Abstract: A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate 10 includes a substrate 12, an AlN buffer layer 14, a first superlattice laminate 16, a second superlattice laminate 18 and a III nitride laminate 20 in this order. The III nitride laminate 20 includes an active layer 24 including an Al?Ga1-?N (0.03??) layer. The first superlattice laminate 16 includes AlaGa1-aN layers 16A and AlbGa1-bN (0.9<b?1) layers 16B which are alternately stacked, where ?<a and a<b hold. The second superlattice laminate 18 includes repeated layer sets each having an AlxGa1-xN layer 18A, an AlyGa1-yN layer 18B, and an AlzGa1-zN (0.9<z?1) layer 18C, where ?<x and x<y<z hold.

Abstract: A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. The fine silver particles are produced by carrying out a fluid preparation step of preparing a reduction fluid, a silver reaction step, and a filtration/washing step. The reaction step is carried out by adding an aqueous silver nitrate fluid to a reduction fluid whose temperature has been increased to a range between 40 and 800 ° C. The aqueous silver nitrate fluid is added at a stretch. The composition containing fine silver particles is produced by dispersing the composition containing the fine silver particles in a polar fluid.

Abstract: There are provided a copper powder for conductive paste, which comprises monodisperse and spherical fine copper particles having a sharp particle size distribution and containing no coarse particles and which can form a thinner electrode film while avoiding a bad influence on electric characteristics thereof, and a method for stably producing such a copper powder for conductive paste. After copper is complexed by adding a complexing agent to an aqueous solution containing copper while blowing air into the solution, the blowing of air is stopped, and then, a reducing agent is added to the solution to deposit copper particles by reduction.

Abstract: A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 ?m. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.

Abstract: A light emitting device 10 includes: a lead frame 12a serving as a mounting portion having a cup 13; a light emitting element 14, mounted on the bottom face 13a of the cup, for emitting light having a predetermined peak wavelength; a layer of large phosphor particles 16, adsorbed and formed on the light emitting element, for absorbing light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the light emitted from the light emitting element; small phosphor particles 18, which have a smaller particle diameter than that of the large phosphor particles, for absorbing at least one of light emitted from the large phosphor particles and light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the at least one of the light emitted from the large phosphor particles and the light emitted from the light emitting element; and a sealing member 20, in which the small phosphor particles are dispersed, for sealin