Abstract: The present invention provides a catalyst in which a reaction initiation temperature at which self-heating function is exhibited is low and which is capable of suppressing carbon accumulation even when a reaction is repeated. The catalyst of the present invention includes a CeZr-based oxide, silicon, and a catalytically active metal, wherein the CeZr-based oxide satisfies CexZryO2 (x+y=1) and the silicon satisfies molar ratios of 0.02?Si/Zr and 0.01<Si/(Ce+Zr+Si)<0.2. When the catalyst is used, a reduction temperature for generating initial oxygen deficiency can be decreased. Depending on the catalytically active metal, a reduction activation treatment can be performed even at about 20° C. without any need for heating. In a repeated hydrogen generating reaction, the deposition of carbon generated on the surface of the catalyst can be suppressed, and a decrease in catalytic activity can be prevented.

Abstract: In the case where a silicon substance having a high theoretical capacity as a negative electrode active material for a lithium ion secondary battery is used as a negative electrode active material, such a negative electrode active material is provided that has a high initial battery capacity and suffers less deterioration in performance even when many cycles of charge and discharge are repeated. A lithium ion secondary battery using the negative electrode active material is provided. Silicon and copper (II) oxide, or silicon, metallic copper and water are pulverized and simultaneously mixed in a pulverization device, thereby providing a negative electrode active material that has good cycle characteristics and a large battery capacity.

Abstract: Provided is an active material composite powder with which resistance can be reduced, and a method for manufacturing the active material composite powder. The active material composite powder includes an active material and lithium niobate attached onto the surface of the active material, and its BET specific surface area S [m2/g] is 0.93<S<1.44, and the method for manufacturing an active material composite powder includes a spraying and drying step of spraying a solution including lithium and a peroxo complex of niobium onto the active material and at the same time drying the solution, and a heating treatment step of carrying out a heating treatment after the spraying and drying step, wherein the temperature of the heating treatment is higher than 123° C. and lower than 350° C.

Abstract: A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission surface contains from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes. The film has a structure wherein grooves having a width in a range of from 0.1 to 50 mm are formed in a total extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.

Abstract: A solder powder having an average particle diameter of, for example, 0.05 ?m or more and less than 3 ?m is obtained by a method of producing a solder powder, including the steps of: putting solid or liquid metal, a non-aqueous solvent, and crushing balls having a diameter of 0.05 mm to 5 mm into a container to obtain a mixture; heating the mixture to 150° C. or higher and stirring the mixture; separating the crushing balls from the mixture after the stirring to obtain a mixture of the solder powder and the non-aqueous solvent; and performing solid-liquid separation on the mixture of the solder powder and the non-aqueous solvent to obtain a solder powder.

Abstract: There is provided a method of producing a radioactive cesium decontaminator, including: suspending magnetic particles in a solvent, and coating each magnetic particle with organic monomer or polymer, to thereby form a precursor; adding a ferrocyanide aqueous solution and an aqueous solution containing at least one kind of transition metal into a suspension liquid containing the precursor after coating while applying a strong shear force, to thereby generate a radioactive cesium decontaminator; and removing water content from a slurry containing the obtained radioactive cesium decontaminator.

Abstract: The present invention provides a catalyst in which a reaction initiation temperature at which self-heating function is exhibited is low and which is capable of suppressing carbon accumulation even when a reaction is repeated. The catalyst of the present invention includes a CeZr-based oxide, silicon, and a catalytically active metal, wherein the CeZr-based oxide satisfies CexZryO2 (x+y=1) and the silicon satisfies molar ratios of 0.02?Si/Zr and 0.01<Si/(Ce+Zr+Si)<0.2. When the catalyst is used, a reduction temperature for generating initial oxygen deficiency can be decreased. Depending on the catalytically active metal, a reduction activation treatment can be performed even at about 20° C. without any need for heating. In a repeated hydrogen generating reaction, the deposition of carbon generated on the surface of the catalyst can be suppressed, and a decrease in catalytic activity can be prevented.

Abstract: Disclosed is a method for recovery of a metal using plants. The method for recovery of a metal involves bringing a protonema of a moss plant belonging to the family Funariaceae into contact with a metal-containing solution in which a metal(s) having an ionization tendency lower than that of silver is dissolved.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

Abstract: There is provided a high-purity carbon nanotube, which can be produced with simple purification by causing graphite to be hardly contained in crude soot obtained immediately after being synthesized by arc-discharge, and a method for producing the same. Soot containing carbon nanotubes produced by arc-discharge using an anode which contains amorphous carbon as a main component is heated at a temperature of not lower than 350° C. to be burned and oxidized, immersed in an acid, heated at a temperature, which is not lower than the heating temperature in the previous burning and oxidation and which is not lower than 500° C., to be burned and oxidized, and immersed in an acid again.

Abstract: An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.

Abstract: A compound represented by General Formula (1) below, where R denotes a C1-C10 hydrocarbon group, Z denotes any one of a sulfide group, a sulfinyl group and a sulfonyl group, and n denotes an integer of 4 to 8 is described. A method for extracting metals and a metal recovery method using a metal extractant comprising the compound represented by General Formula (1) are also described.

Abstract: A solder powder having an average particle diameter of, for example, 0.05 ?m or more and less than 3 ?m is obtained by a method of producing a solder powder, including the steps of: putting solid or liquid metal, a non-aqueous solvent, and crushing balls having a diameter of 0.05 mm to 5 mm into a container to obtain a mixture; heating the mixture to 150° C. or higher and stirring the mixture; separating the crushing balls from the mixture after the stirring to obtain a mixture of the solder powder and the non-aqueous solvent; and performing solid-liquid separation on the mixture of the solder powder and the non-aqueous solvent to obtain a solder powder.

Abstract: There is provided a lithium-transition metal oxide powder with a coating layer containing lithium niobate formed on a part or the whole part of a surface of a lithium-transition metal oxide particle and having a low powder compact resistance, and a positive electrode active material for a lithium ion battery containing the lithium-transition metal oxide powder. Specifically, there is provided the lithium-transition metal oxide powder composed of a lithium-transition metal oxide particle with a part or the whole part of a surface coated with a coating layer containing lithium niobate, wherein a carbon-content is 0.03 mass % or less.

Abstract: An object of the present invention is to provide a method for producing a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

Abstract: There is provided a high-purity carbon nanotube, which can be produced with simple purification by causing graphite to be hardly contained in crude soot obtained immediately after being synthesized by arc-discharge, and a method for producing the same. Soot containing carbon nanotubes produced by arc-discharge using an anode which contains amorphous carbon as a main component is heated at a temperature of not lower than 350° C. to be burned and oxidized, immersed in an acid, heated at a temperature, which is not lower than the heating temperature in the previous burning and oxidation and which is not lower than 500° C., to be burned and oxidized, and immersed in an acid again.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.

Abstract: A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.

Abstract: Optical filter which is adapted to prevent the reflection of external light and improve a signal level of a signal sent from a display device by preventing attenuation thereof, and which is further adapted to prevent a change in hue of an image and to improve the hue, contrast and brightness of an image, thereby enhancing visibility. First, a liquid crystal display device (1) outputs light which is linearly polarized light. First linearly polarizing plate (2) is mounted in the filter in such a manner as to be adjusted to an axis of polarization of the linearly polarized light. Namely, the light outputted from the liquid crystal display device (1) passes through the first linearly polarizing plate (2) without being changed. The light passing through the first linearly polarizing plate (2) is then changed by a first quarter-wave phase difference plate (11) into circularly polarized light so that the phase difference between extraordinary light and ordinary light is (1/4) of the wavelength.