Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.

Abstract: A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.

Abstract: A nitriding treatment method of a steel member, in which a nitriding treatment step is performed in which the steel member is subjected to a nitriding treatment in a nitriding gas atmosphere having a nitriding potential with which a ?? phase or ? phase iron nitride compound layer is generated on a surface of the steel member, and then, a passing step is performed in which the steel member is made to pass through an atmosphere at 425° C. to 600° C. where the iron nitride compound layer does not grow over five minutes or more, the iron nitride compound layer has the ?? phase uppermost surface layer, and the ?? phase is made to precipitate in the iron nitride compound layer by the proportion of 40% or more.

Abstract: A continuous nitriding treatment furnace includes a nitriding chamber, a heater, a first nitriding zone, and a second nitriding zone lower in atmosphere gas temperature than the first nitriding zone by 25° C. to 150° C., the continuous nitriding treatment furnace being configured such that an atmosphere gas in the first nitriding zone flows into the second nitriding zone and being configured to execute a nitriding treatment that forms an iron nitride compound layer composed of an ? phase or of the ? phase and a ?? phase on a surface of the steel member in the first nitriding zone and precipitates the ?? phase in the iron nitride compound layer in the second nitriding zone.

Abstract: A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30?a/b?1.3 and 0.30?a+b?0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.

Abstract: A heat treatment apparatus includes: a treatment chamber unit that is, inside a furnace shell, detachably fixed to the furnace shell; and a power supply portion, in which the treatment chamber unit includes: a treatment container in which a heat treatment is performed on a workpiece; a heat insulating material provided inside the treatment container; a heater that has a heating element located inside the treatment container and has a terminal located outside the treatment container; and a busbar that is provided on the outside of the treatment container and is electrically connected to the terminal of the heater, the power supply portion is provided outside the treatment container, and the busbar and the power supply portion are detachably connected to each other.

Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.

Abstract: A vanadium silicon nitride film formed as a hard film to a base material satisfies 0.30?a/b?1.7 and 0.24?b?0.36 when a=vanadium element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]) and b=silicon element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]), and has a hardness of 2300 HV or more.

Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.

Abstract: In a door structure of a heat treatment furnace performing a heat treatment of a workpiece, there are provided: a first opening member and a second opening member in which workpiece passing ports where the transferred workpiece passes are formed; and a sheet shutter, the sheet shutter is provided with a winding portion and a shutter portion, the shutter portion is disposed between the first opening member and the second opening member, the shutter portion is provided with a first sheet portion which covers the workpiece passing port of the first opening member and a second sheet portion which covers the workpiece passing port of the second opening member at a time that the shutter portion is closed, and it is configured that a gas storage portion is formed between the first opening member and the second opening member at the time that the shutter portion is closed.

Abstract: A heat treatment facility performing a heat treatment on a workpiece, the heat treatment facility includes: a treatment container in which the workpiece is housed; a heater which is provided in the treatment container and heats the workpiece by radiation heat at least from below the workpiece; and a plurality of support posts which are provided in the treatment container and support the workpiece.

Abstract: A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30?a/b?1.3 and 0.30?a+b?0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.

Abstract: In an intermediate layer formed between a base material and a DLC layer, a Ti layer and a TiC layer formed on a surface of the Ti layer are provided, and a carbon content of the entire layer containing the Ti layer and the TiC layer is 53 at % or more and 77 at % or less.

Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at %/or less.

Abstract: A vanadium silicon nitride film formed as a hard film to a base material satisfies 0.30?a/b?1.7 and 0.24?b?0.36 when a=vanadium element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]) and b=silicon element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]), and has a hardness of 2300 HV or more.

Abstract: In a heater unit for a carburizing furnace that carburizes a workpiece, a heater that heats a furnace atmosphere; and a heater supporting member that reflects radiant heat of the heater are provided, in which a heat generation part of the heater is attached to the heater supporting member, and a heat generation body composing the heat generation part is formed in a bellows shape.

Abstract: A first nitriding process step is performed in which a steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential with which a nitride compound layer having a ?? phase or an ? phase is generated, and thereafter a second nitriding process step is performed in which the steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential lower than the nitriding potential in the first nitriding process step, to thereby precipitate the ?? phase in the nitride compound layer. It is possible to generate the nitride compound layer having a desired phase mode uniformly all over a component to be treated and to manufacture a nitrided steel member high in pitting resistance and bending fatigue strength.

Abstract: A continuous nitriding treatment furnace includes a nitriding chamber, a heater, a first nitriding zone, and a second nitriding zone lower in atmosphere gas temperature than the first nitriding zone by 25° C. to 150° C., the continuous nitriding treatment furnace being configured such that an atmosphere gas in the first nitriding zone flows into the second nitriding zone and being configured to execute a nitriding treatment that forms an iron nitride compound layer composed of an ? phase or of the ? phase and a ?? phase on a surface of the steel member in the first nitriding zone and precipitates the ?? phase in the iron nitride compound layer in the second nitriding zone.

Abstract: A heat treatment facility performing a heat treatment on a workpiece, the heat treatment facility includes: a treatment container in which the workpiece is housed; a heater which is provided in the treatment container and heats the workpiece by radiation heat at least from below the workpiece; and a plurality of support posts which are provided in the treatment container and support the workpiece.

Abstract: In a door structure of a heat treatment furnace performing a heat treatment of a workpiece, there are provided: a first opening member and a second opening member in which workpiece passing ports where the transferred workpiece passes are formed; and a sheet shutter, the sheet shutter is provided with a winding portion and a shutter portion, the shutter portion is disposed between the first opening member and the second opening member, the shutter portion is provided with a first sheet portion which covers the workpiece passing port of the first opening member and a second sheet portion which covers the workpiece passing port of the second opening member at a time that the shutter portion is closed, and it is configured that a gas storage portion is formed between the first opening member and the second opening member at the time that the shutter portion is closed.